Accurate multibias equivalent-circuit extraction for GaN HEMTs
This paper focuses on the determination and analysis of an accurate small-signal equivalent
circuit for gallium-nitride high electron-mobility transistors under different bias conditions …
circuit for gallium-nitride high electron-mobility transistors under different bias conditions …
DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures
In this work, the device characteristics of GaN-based high-electron-mobility transistors
(HEMTs) were systematically investigated by the direct current (DC) and low-frequency …
(HEMTs) were systematically investigated by the direct current (DC) and low-frequency …
The large world of FET small‐signal equivalent circuits
The small‐signal equivalent circuit modeling of microwave field‐effect transistors (FETs) is
an evergreen and ever flourishing research field that has to be up‐to‐date with …
an evergreen and ever flourishing research field that has to be up‐to‐date with …
Measurement-based extraction and analysis of a temperature-dependent equivalent-circuit model for a SAW resonator: From room down to cryogenic temperatures
This article provides for the first time a very extensive experimental characterization coupled
with a fully analytical modeling in order to investigate, in a systematic and comprehensive …
with a fully analytical modeling in order to investigate, in a systematic and comprehensive …
An Extensive Experimental Analysis of the Kink Effects in and for a GaN HEMT
This paper, for the first time, analyzes in detail the kink phenomenon in S 22 as observed in
GaN HEMT technology. To gain a comprehensive understanding, the kink effect (KE) is …
GaN HEMT technology. To gain a comprehensive understanding, the kink effect (KE) is …
A new millimeter-wave small-signal modeling approach for pHEMTs accounting for the output conductance time delay
A new technique is developed for determining analytically a millimeter-wave small-signal
equivalent-circuit model of GaAs pseudomorphic HEMTs from scattering parameter …
equivalent-circuit model of GaAs pseudomorphic HEMTs from scattering parameter …
Cryogenic characterization and analysis of nanoscale SOI FETs using a virtual source model
This article reports the temperature-dependent characterization and analysis of quasi-
ballistic transport in fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor …
ballistic transport in fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor …
Lumped-element equivalent-circuit modeling of millimeter-wave HEMT parasitics through full-wave electromagnetic analysis
Y Karisan, C Caglayan… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
We present a broadband lumped-element parasitic equivalent circuit to accurately capture
the frequency response of electromagnetic (EM) interactions inside the structure and …
the frequency response of electromagnetic (EM) interactions inside the structure and …
Small signal model parameters analysis of GaN and GaAs based HEMTs over temperature for microwave applications
Thermal and small-signal model parameters analysis have been carried out on 0.5 μm×(2×
100 μm) AlGaAs/GaAs HEMT grown on semi-insulating GaAs substrate and 0.25 μm×(2× …
100 μm) AlGaAs/GaAs HEMT grown on semi-insulating GaAs substrate and 0.25 μm×(2× …
On the small signal modeling of advanced microwave FETs: A comparative study
Although many successful techniques have been proposed in the last decades for extracting
the small signal equivalent circuit for microwave transistors from scattering parameter …
the small signal equivalent circuit for microwave transistors from scattering parameter …