A study of the current and capacitance dependences on the forward voltage in Au/n-GaN
Schottky diodes, the sub-band optical absorption spectra, and the defect photoluminescence …

The paper presents a new way how to calculate the currents in a Schottky barrier. The novel
phenomenological model extends the Shockley-Read-Hall recombination-generation theory …

This report is on the electrical properties of all‐amorphous junction field‐effect transistors
(JFETs) based on n‐type zinc oxynitride (ZnON) as a channel material and room …

The work presents a physical model of trap-assisted tunneling that can quantitatively
determine the effect of traps upon the total current through a GaN/AlGaN/GaN …

We present an efficient band-to-trap tunneling model based on the Schenk approach, in
which an analytic density-of-states (DOS) model is developed based on the open boundary …

Time dependent junction degradation (TDJD) is studied in detail for advanced FinFET
technology. It has been shown that TDJD is caused by band to band tunneling current …

Представлены результаты исследования зависимостей тока и емкости от прямого
смещения диодов Шоттки Au/$ n $-GaN, а также спектров подзонного оптического …

The paper examines the effect of direct tunnelling (DT) and trap-assisted tunnelling (TAT)
upon the gate leakage current in HEMT transistors on GaN. The gate contact consists of a …

We have designed and applied a new trap-assisted-tunnelling model to simulate
GaN/AlGaN/GaN Schottky structures. The influence was investigated of a varied cap …

-,(1) where κ is the permittivity, ψ is the electric potential, Qtot is the sheet bound interface
charge due to spontaneous and piezoelectric polarization at the AlGaN/GaN interface, n and …