Research to realize long-wavelength, GaInNAs quantum well lasers has been intense in the
past three years. The results have been very promising considering the relative immaturity …

The present paper reviews recent achievements in the fabrication of diode lasers for the
near-infrared range on GaAs substrates. 1.3 µm light emitters are currently widely used in …

We report an anomalous temperature dependence of the photoluminescence (PL) spectrum
of a 7 nm Ga 0.72 In 0.28 N 0.028 As 0.972/GaAs single quantum well. The PL peak energy …

We investigate the electronic states in strained Ga 0.62 In 0.38 N 0.015 As 0.985/GaAs
multiple-quantum-well structures using photoluminescence and (polarized) …

We present a new monolithic GaAs-based semiconductor saturable bsorber operating at
1.55 µ m. An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was …

We demonstrate a GaAs-based pin resonant-cavity-enhanced (RCE) GaInNAs
photodetector operating near 1.3 μm. The device design was optimized using a transfer …

A fully microscopic model is used to calculate absorption/gain and spontaneous emission for
GaInNAs quantum-well laser gain media. It is demonstrated how this approach can be used …

Optical gain spectra of (GaIn)(NAs)/GaAs quantum-well lasers operating in the 1.3-μm-
emission-wavelength regime are measured and compared to those of a commercial …

The absorption and gain for an InGaNAs/GaAs quantum-well structure is calculated and
compared to that of a more conventional InGaAs/InGaPAs structure, both lasing in the 1.3 …

Highly luminescent GaAs1− xNx alloys were successfully grown by atmospheric pressure
metalorganic vapor-phase epitaxy (MOVPE). The nitrogen composition x of as high as 5.6 …