Global optimization of transition paths in complex atomic scale systems is addressed in the
context of misfit dislocation formation in a strained Ge film on Si (001). Such paths contain …

Materials irradiated with multiple femtosecond laser pulses in subablation conditions are
observed to develop various types of self-assembled morphologies that range from …

In the past twenty years, new experimental approaches, improved models and progress in
simulation techniques have brought new insights into longstanding issues concerning …

This chapter is devoted to the structure and properties of dislocations obtained at high stress
in silicon, which have been shown to have different core structures from the ones observed …

Silicon crystals have an important role in the electronics industry, and silicon nanoparticles
have applications in areas such as nanoelectromechanical systems, photonics and …

Individual single-crystalline Si nanowires (NWs) were bent by forming loops or arcs with
different radius. Positional-resolved atomic level strain distribution (PRALSD) along both of …

To safely and reliably use nanowires (NWs) for exploring new functions for different
nanodevices, the mechanical properties and structural evolution of the nanowires under …

Tip-based nanomachining (TBN) approaches has proven to be a powerful and feasible
technique for fabrication of microstructures. The molecular dynamics (MD) simulation has …

This paper presents a new technique, termed femtosecond laser shock peening ablation in
liquids (fs-LSPAL), which can realize simultaneous crack micro/nanomanufacturing and …

A new parametrization of the widely used Stillinger–Weber potential is proposed for silicon,
allowing for an improved modelling of defects and plasticity-related properties. The …