A review on radiation‐hardened memory cells for space and terrestrial applications
Over the past four decades, single event upset (SEU) and single event multiple node upset
(SEMNU) have become the major issues in the memory area. Moreover, these upsets are …
(SEMNU) have become the major issues in the memory area. Moreover, these upsets are …
Quadruple and sextuple cross-coupled SRAM cell designs with optimized overhead for reliable applications
Aggressive technology scaling makes modern advanced SRAMs more and more vulnerable
to soft errors such as single-node upsets (SNUs) and double-node upsets (DNUs). This …
to soft errors such as single-node upsets (SNUs) and double-node upsets (DNUs). This …
Quadruple cross-coupled latch-based 10T and 12T SRAM bit-cell designs for highly reliable terrestrial applications
J Jiang, Y Xu, W Zhu, J **ao… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
In this paper, quadruple cross-coupled storage cells (QUCCE) 10T and 12T are proposed in
130 nm CMOS technology. The QUCCE 10T and 12T are about 2× and 3.4× the minimum …
130 nm CMOS technology. The QUCCE 10T and 12T are about 2× and 3.4× the minimum …
MURLAV: a multiple-node-upset recovery latch and algorithm-based verification method
A Yan, Z Li, Z Gao, J Zhang, Z Huang… - … on Computer-Aided …, 2024 - ieeexplore.ieee.org
In advanced CMOS technologies, integrated circuits are sensitive to multiple-node-upsets
(MNUs) induced in harsh radiation environments. The existing verification of the reliability of …
(MNUs) induced in harsh radiation environments. The existing verification of the reliability of …
Novel speed-and-power-optimized SRAM cell designs with enhanced self-recoverability from single-and double-node upsets
The continuous advancement of CMOS technologies makes SRAMs more and more
sensitive to soft errors. This paper presents two novel radiation-hardened SRAM cell …
sensitive to soft errors. This paper presents two novel radiation-hardened SRAM cell …
Design of soft-error-aware SRAM with multi-node upset recovery for aerospace applications
To achieve improved speed of operation, a higher integration density and lower power
dissipation, transistors are being scaled aggressively. This trend has reduced the critical …
dissipation, transistors are being scaled aggressively. This trend has reduced the critical …
Design and analysis of radiation hardened 10 T SRAM cell for space and terrestrial applications
Soft errors are the primary concern in space and terrestrial integrated circuit applications.
When a charged particle from space collides with a scaled memory circuit, a transient pulse …
When a charged particle from space collides with a scaled memory circuit, a transient pulse …
Novel write-enhanced and highly reliable RHPD-12T SRAM cells for space applications
Q Zhao, C Peng, J Chen, Z Lin… - IEEE Transactions on Very …, 2020 - ieeexplore.ieee.org
In this brief, we proposed, based on the polarity upset mechanism of single-event transient
voltage of n-channel metal-oxide-semiconductor (nMOS) transistors, a novel radiation …
voltage of n-channel metal-oxide-semiconductor (nMOS) transistors, a novel radiation …
Soft-error-aware read-stability-enhanced low-power 12T SRAM with multi-node upset recoverability for aerospace applications
With the advancement of technology, the size of transistors and the distance between them
are reducing rapidly. Therefore, the critical charge of sensitive nodes is reducing, making …
are reducing rapidly. Therefore, the critical charge of sensitive nodes is reducing, making …
Power optimized SRAM cell with high radiation hardened for aerospace applications
The SRAM cells suffer from soft errors under high radiation environment like aerospace and
satellite applications. Few radiations hardened based popular cells are 12T Dice and 12T …
satellite applications. Few radiations hardened based popular cells are 12T Dice and 12T …