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The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
AlGaN photonics: recent advances in materials and ultraviolet devices
D Li, K Jiang, X Sun, C Guo - Advances in Optics and Photonics, 2018 - opg.optica.org
AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …
Compositionally graded III-nitride alloys: Building blocks for efficient ultraviolet optoelectronics and power electronics
H Zhang, C Huang, K Song, H Yu, C **_in_Graded_AlGaN_Epilayers_Grown_on_AlN_Single_Crystal_Substrates/links/5b16969d4585151f91fb97da/Polarization-Induced-Do**-in-Graded-AlGaN-Epilayers-Grown-on-AlN-Single-Crystal-Substrates.pdf" data-clk="hl=sv&sa=T&oi=gga&ct=gga&cd=3&d=9405489111093215048&ei=Vge6Z82ZHo-w6rQPpeb7oAg" data-clk-atid="SP-DnYMCh4IJ" target="_blank">[PDF] researchgate.net
Polarization-induced do** in graded AlGaN epilayers grown on AlN single crystal substrates
Compositionally graded AlxGa1-xN epilayers were coherently grown on AlN single crystal
substrates by MOCVD, and polarization-induced do** was determined by contactless …
substrates by MOCVD, and polarization-induced do** was determined by contactless …
[HTML][HTML] Cross-plane thermal conductivity of GaN/AlN superlattices
A Spindlberger, D Kysylychyn, L Thumfart… - Applied Physics …, 2021 - pubs.aip.org
Heterostructures consisting of alternating GaN/AlN epitaxial layers represent the building
blocks of state-of-the-art devices employed for active cooling and energy-saving lightning …
blocks of state-of-the-art devices employed for active cooling and energy-saving lightning …
Polarization effects in graded AlGaN nanolayers revealed by current-sensing and Kelvin probe microscopy
We experimentally demonstrate that the conductivity of graded Al x Ga1–x N increases as a
function of the magnitude of the Al concentration gradient (% Al/nm) due to polarization …
function of the magnitude of the Al concentration gradient (% Al/nm) due to polarization …
Local structure and ordering of Al atoms in AlxGa1− xN epilayers
In this study, we investigate the local structure of aluminum (Al) in a comprehensive series of
Al x Ga 1− x N epilayers, where the Al concentration spans from the dilute limit to 100%. We …
Al x Ga 1− x N epilayers, where the Al concentration spans from the dilute limit to 100%. We …
Influence of Mn co-do** on the magnetic properties of planar arrays of Ga x Fe 4− x N nanocrystals in a GaN matrix
Magnetic nanocrystals embedded in a semiconducting matrix are gaining increasing
attention for potential applications in spintronic devices. We report about the magnetic …
attention for potential applications in spintronic devices. We report about the magnetic …
Magnetotransport property of graded AlGaN/GaN heterostructure
KH Gao, XR Ma, DB Zhou, S Li, ZQ Li, T Lin… - Superlattices and …, 2019 - Elsevier
This paper reports magnetotransport property of a graded AlGaN/GaN heterostructure.
When temperature (T) is higher than 10 K, resistivity as a function of T exhibits a metallic …
When temperature (T) is higher than 10 K, resistivity as a function of T exhibits a metallic …
AlGaN-based thin-film ultraviolet laser diodes and light-emitting diodes
Wide bandgap semiconductor aluminum gallium nitride (AlGaN) alloys have been identified
as the key materials to build ultraviolet light emitting devices owing to its direct tunable …
as the key materials to build ultraviolet light emitting devices owing to its direct tunable …