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AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction
This paper presents a comprehensive review of AlGaN/GaN high electron mobility transistor
failure physics and reliability, focusing on mechanisms affecting the gate-drain edge, where …
failure physics and reliability, focusing on mechanisms affecting the gate-drain edge, where …
A current-transient methodology for trap analysis for GaN high electron mobility transistors
Trap** is one of the most deleterious effects that limit performance and reliability in GaN
HEMTs. In this paper, we present a methodology to study trap** characteristics in GaN …
HEMTs. In this paper, we present a methodology to study trap** characteristics in GaN …
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
This paper reports direct evidence for trap-related RF output power loss in GaN high
electron mobility transistors (HEMTs) grown by metal organic chemical vapor deposition …
electron mobility transistors (HEMTs) grown by metal organic chemical vapor deposition …
Lifetesting GaN HEMTs with multiple degradation mechanisms
BM Paine, SR Polmanter, VT Ng… - … on Device and …, 2015 - ieeexplore.ieee.org
A technique is described, to efficiently evaluate the reliability of an RF semiconductor device
when several different mechanisms contribute simultaneously to its wearout. This is of …
when several different mechanisms contribute simultaneously to its wearout. This is of …
Slow detrap** transients due to gate and drain bias stress in high breakdown voltage AlGaN/GaN HEMTs
S DasGupta, M Sun, A Armstrong… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
Charge trap** and slow (from 10 s to>; 1000 s) detrap** in AlGaN/GaN high electron
mobility transistors (HEMTs) designed for high breakdown voltages (>; 1500 V) is studied …
mobility transistors (HEMTs) designed for high breakdown voltages (>; 1500 V) is studied …
Off-state leakage and current collapse in AlGaN/GaN HEMTs: a virtual gate induced by dislocations
The existence of a correlation between current collapse and off-state reverse-bias leakage
current in heteroepitaxially grown AlGaN/GaN high-electron-mobility transistors is …
current in heteroepitaxially grown AlGaN/GaN high-electron-mobility transistors is …
A thorough evaluation of GaN HEMT degradation under realistic power amplifier operation
In this paper, we experimentally investigate the effects of degradation observed on 0.15-µm
GaN HEMT devices when operating under realistic power amplifier conditions. The latter will …
GaN HEMT devices when operating under realistic power amplifier conditions. The latter will …
Electroluminescence and transmission electron microscopy characterization of reverse-biased AlGaN/GaN devices
Reverse-bias stress testing has been applied to a large set of more than 50 AlGaN/GaN high
electron mobility transistors, which were fabricated using the same process but with different …
electron mobility transistors, which were fabricated using the same process but with different …
Modeling of the gate leakage current in AlGaN/GaN HFETs
A Goswami, RJ Trew, GL Bilbro - IEEE Transactions on Electron …, 2014 - ieeexplore.ieee.org
A new physics-based model of the gate leakage current in AlGaN/GaN heterojunction field
effect transistors (HFETs) is demonstrated. The model predicts accurately the gate-leakage …
effect transistors (HFETs) is demonstrated. The model predicts accurately the gate-leakage …
Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation
Hot electrons in AlGaN/GaN high electron mobility transistors are studied during radio
frequency (RF) and DC operation by means of electroluminescence (EL) microscopy and …
frequency (RF) and DC operation by means of electroluminescence (EL) microscopy and …