This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs),
focusing on broadband design techniques. An overview of the main solid-state technologies …

Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …

A high temperature stable amplifier characteristics for L-band or 2 GHz was studied using
AlGaN/GaN high electron mobility transistors (HEMTs) on 3C-SiC/Si substrate. A crack free …

The performance of transistors designed specifically for high-frequency applications is
critically reliant upon the semi-insulating electrical properties of the substrate. The suspected …

AlN nucleation layers are the basement of GaN-on-Si structures grown for light-emitting
diodes, high frequency telecommunication and power switching systems. In this context, our …

AlGaN/GaN high electron mobility transistor (HEMT) has attracted great attention in
ultraviolet photodetectors (UVPDs) due to the ultrahigh responsivity and high photocurrent …

This work demonstrates high-performance AlInGaN/AlN/GaN high electron mobility
transistors grown on 150 mm p-type low resistivity (resistivity~ 20-100 Ω-cm) silicon …

The influence of the semiconducting Si substrate on the performance of GaN-on-Si RF
technology is reviewed. Firstly, the formation of a parasitic conduction channel at the …

A carbon-regulated Si substrate engineering has been adopted to reduce the RF loss of
GaN-based HEMT buffer stacks. By implanting the substrate with high-dose carbon …

An ultralow-supersaturation Al pretreatment approach has been proposed to achieve low
threading dislocation (TD) density and low radio frequency (RF) loss GaN/AlN layer stacks …