Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

The first decade of the 21st-century has seen a rapid development in infrared photodetector
technology. At the end of the last millennium there were two dominant IR systems, InSb-and …

As important opto-electronical devices, nanofilm photodetectors constructed from inorganic
low-dimensional nanostructures have drawn prime attention due to their significance in …

Numerous optoelectronic devices based on low-dimensional nanostructures have been
developed in recent years. Among these, pyramidal low-dimensional semiconductors (zero …

Ge1–x Sn x alloys are among a small class of benign semiconductors with composition
tunable bandgaps in the near-infrared (NIR) spectrum. As the amount of Sn is increased, the …

The vast majority of power generation in the United States today is produced through the
same processes as it was in the late-1800s: heat is applied to water to generate steam …

We present gallium antimonide (GaSb) p–i–n photodiodes for use as thermophotovoltaic
(TPV) cells grown on gallium arsenide (100) substrates using the interfacial misfit array …

Hybridizing air-stable organic-molecules with advanced III-V semiconductor quantum-dots
(QDs) structures can be utilized to create a new generation of biochemical sensing devices …

We report a facile route to synthesize high quality earth abundant absorber Cu3BiS3,
tailoring the band gap with the morphology manipulation and thereby analyzed the …

We report the synthesis and application Cu3BiS3 nanorods in infrared photodectection.
Cu3BiS3 nano rods were characterized structurally, optically and electrically. The detailed …