In this work, the hydrogen storage capacities of two-dimensional siligene (2D-SiGe)
functionalized with alkali metal (AM) and alkali-earth metal (AEM) atoms were studied using …

Heterostructures play significant roles in modern semiconductor devices and
micro/nanosystems in a plethora of applications in electronics, optoelectronics, and …

This review primarily deals with the compensation of 'matrix effect'in secondary ion mass
spectrometry (SIMS) for direct quantitative analysis of materials using MCs+-SIMS approach …

Spontaneous superlattice structure in few monolayer length scale has been observed very
recently in Al x Ga 1-x As epilayer on (001) GaAs substrate grown by Metal Organic …

Advancement in the understanding of fundamental aspects of Secondary Ion Mass
Spectrometry (SIMS) has made this technique to be extremely powerful for quantitative …

SiGe alloy, owing to its high electron and hole mobility, has potential applications in high-
speed microelectronic device technology. The optimization of such technology requires the …

It is shown that X-ray specular reflectivity may be described in terms of canonical distribution
functions (CDFs) pj (z) which is a probability to find an element of sort j at a depth z from the …

The elastic response of monolayer silicon-germanium alloys (Si 1-x Ge x, 0≤ x≤ 1) is
investigated using first-principles calculations. It is found that the atomic arrangement of …

The growth process of germanium inverted quantum hut (IQH) structures, which are
embedded in a silicon lattice, has been studied using anomalous x-ray scattering …

A new method for determining the concentration profiles of chemical elements in multilayer
metallic nanoheterostructures from X-ray reflectometry data has been developed as applied …