Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications
Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …
breakthrough basic research discoveries and industrial applications in the fields of magnetic …
Giant tunnel magnetoresistance in magnetic tunnel junctions with a crystalline MgO (0 0 1) barrier
S Yuasa, DD Djayaprawira - Journal of Physics D: Applied …, 2007 - iopscience.iop.org
A magnetic tunnel junction (MTJ), which consists of a thin insulating layer (a tunnel barrier)
sandwiched between two ferromagnetic electrode layers, exhibits tunnel magnetoresistance …
sandwiched between two ferromagnetic electrode layers, exhibits tunnel magnetoresistance …
Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕ MgO∕ CoFeB pseudo-spin-valves annealed at high temperature
The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300 K in Ta∕ Co
20 Fe 60 B 20∕ Mg O∕ Co 20 Fe 60 B 20∕ Ta pseudo-spin-valve magnetic tunnel junction …
20 Fe 60 B 20∕ Mg O∕ Co 20 Fe 60 B 20∕ Ta pseudo-spin-valve magnetic tunnel junction …
Introduction to spin wave computing
This paper provides a tutorial overview over recent vigorous efforts to develop computing
systems based on spin waves instead of charges and voltages. Spin-wave computing can …
systems based on spin waves instead of charges and voltages. Spin-wave computing can …
Magnetic tunnel junctions for spintronic memories and beyond
In this paper, recent developments in magnetic tunnel junctions (MTJs) are reported with
their potential impacts on integrated circuits. MTJs consist of two metal ferromagnets …
their potential impacts on integrated circuits. MTJs consist of two metal ferromagnets …
Giant tunneling magnetoresistance up to 410% at room temperature in fully epitaxial Co∕ MgO∕ Co magnetic tunnel junctions with bcc Co (001) electrodes
Fully epitaxial Co (001)∕ Mg O (001)∕ Co (001) magnetic tunnel junctions (MTJs) with
metastable bcc Co (001) electrodes were fabricated with molecular beam epitaxy. The MTJs …
metastable bcc Co (001) electrodes were fabricated with molecular beam epitaxy. The MTJs …
Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier
The authors investigate the effect of electrode composition on the tunnel magnetoresistance
(TMR) ratio of (Co x Fe 100− x) 80 B 20∕ Mg O∕(Co x Fe 100− x) 80 B 20 pseudo-spin …
(TMR) ratio of (Co x Fe 100− x) 80 B 20∕ Mg O∕(Co x Fe 100− x) 80 B 20 pseudo-spin …
Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions
Magnetic random-access memory (MRAM) based on voltage-controlled magnetic anisotropy
in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance …
in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance …
Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB| MgO interface
We studied the impact of different insertion layers (Ta, Pt, and Mg) at the CoFeB| MgO
interface on voltage-controlled magnetic anisotropy (VCMA) effect and other magnetic …
interface on voltage-controlled magnetic anisotropy (VCMA) effect and other magnetic …
Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB∕ MgO∕ CoFeB magnetic tunnel junctions
The authors report tunnel magnetoresistance (TMR) ratios as high as 472% at room
temperature and 804% at 5 K in pseudo-spin-valve (PSV) Co Fe B∕ Mg O∕ Co Fe B …
temperature and 804% at 5 K in pseudo-spin-valve (PSV) Co Fe B∕ Mg O∕ Co Fe B …