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Si electrochemical liquid phase epitaxy: low-temperature growth of hyperdoped epitaxial Si films
N Downes, J DeMuth, J Waelder, QB Cheek… - Chemistry of …, 2022 - ACS Publications
Epitaxial films of Si have been prepared at room temperature by electrochemical liquid
phase epitaxy (ec-LPE). Crystalline Si films were grown on both Si (111) and Si (100) …
phase epitaxy (ec-LPE). Crystalline Si films were grown on both Si (111) and Si (100) …
Micro-Raman investigation of p-type B doped Si (1 0 0) revisited
S Palleschi, D Mastrippolito, P Benassi… - Applied Surface …, 2021 - Elsevier
The do** concentration of B doped single-crystal Czochralski Si (1 0 0) wafers (6× 10 14-
5× 10 19 cm− 3) has been monitored via micro-Raman spectroscopy using visible (633 and …
5× 10 19 cm− 3) has been monitored via micro-Raman spectroscopy using visible (633 and …
[HTML][HTML] Boron activation in silicon thin films grown by PECVD under epitaxial and microcrystalline conditions
Boron do** level and boron activation in silicon thin films grown by PECVD under
epitaxial (p+ epi‑Si) and microcrystalline (p+ µc-Si) conditions have been investigated as …
epitaxial (p+ epi‑Si) and microcrystalline (p+ µc-Si) conditions have been investigated as …
Interfacial hydrogen incorporation in epitaxial silicon for layer transfer
J An, Z Zheng, R Gong, TBT Nguyen, H Jun… - Applied Surface …, 2020 - Elsevier
Recently, epitaxial Si layers have attracted strong attention, particularly in photovoltaics. This
successful application depends mainly on the easiness of their transfer to a foreign carrier …
successful application depends mainly on the easiness of their transfer to a foreign carrier …
Annealing of boron-doped hydrogenated crystalline silicon grown at low temperature by PECVD
M Chrostowski, J Alvarez, A Le Donne, S Binetti… - Materials, 2019 - mdpi.com
We investigate low-temperature (< 200° C) plasma-enhanced chemical vapor deposition
(PECVD) for the formation of p–n junctions. Compared to the standard diffusion or …
(PECVD) for the formation of p–n junctions. Compared to the standard diffusion or …
Transmission electron microscopy characterization of low temperature boron doped silicon epitaxial films
G Noircler, M Chrostowski, M Larranaga, E Drahi… - …, 2020 - pubs.rsc.org
Transmission electron microscopy (TEM) techniques can provide a complementary
understanding of the physico-chemical mechanisms of the growth and the annealing …
understanding of the physico-chemical mechanisms of the growth and the annealing …
Investigating the Effect of Process Parameter on the Properties of Rf Sputtered pSi Thin Film by Taguchi and ANOVA Analysis
Boron doped pSi was deposited on Si substrate in the RF magnetron sputtering system by
varying three process parameters, namely-sputtering power, working pressure, and Ar gas …
varying three process parameters, namely-sputtering power, working pressure, and Ar gas …
Self-formation of SiGe oxide, Ge, and void multilayers via thermal oxidation of hydrogenated epitaxial SiGe films
In this work, hydrogenated SiGe thin films epitaxially grown on crystalline Si (c-Si) at 175° C
are annealed at 800° C in a low vacuum system. The influence of H from the thin film and …
are annealed at 800° C in a low vacuum system. The influence of H from the thin film and …
Investigation of the Effect of Process Parameters by Taguchi Method on Structural and Electrical Properties of RF Magnetron Sputtered SiO2 & pSi on Si Substrate
SM Uchayash - 2021 - search.proquest.com
Abstract In this work, Taguchi Signal-to-noise (S/N) analysis was applied to investigate the
effect of varying three process parameters, namely-sputtering power, working pressure and …
effect of varying three process parameters, namely-sputtering power, working pressure and …