HfO2-based resistive switching memory devices for neuromorphic computing
HfO 2-based resistive switching memory (RRAM) combines several outstanding properties,
such as high scalability, fast switching speed, low power, compatibility with complementary …
such as high scalability, fast switching speed, low power, compatibility with complementary …
Atomic layer deposition films for resistive random‐access memories
Resistive random‐access memory (RRAM) stands out as a promising memory technology
due to its ease of operation, high speed, affordability, exceptional stability, and potential to …
due to its ease of operation, high speed, affordability, exceptional stability, and potential to …
Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications
This work presents 2-bits/cell operation in deeply scaled ferroelectric finFETs (Fe-finFET)
with a 1 µs write pulse of maximum±5 V amplitude and WRITE endurance above 109 cycles …
with a 1 µs write pulse of maximum±5 V amplitude and WRITE endurance above 109 cycles …
Uniform crystal formation and electrical variability reduction in hafnium-oxide-based ferroelectric memory by thermal engineering
In this paper, we achieved excellent variation control, endurance enhancement, and
leakage reduction in zirconium (Zr)-doped hafnium oxide (Hf1–x Zr x O2) based ferroelectric …
leakage reduction in zirconium (Zr)-doped hafnium oxide (Hf1–x Zr x O2) based ferroelectric …
Evidence of soft bound behaviour in analogue memristive devices for neuromorphic computing
The development of devices that can modulate their conductance under the application of
electrical stimuli constitutes a fundamental step towards the realization of synaptic …
electrical stimuli constitutes a fundamental step towards the realization of synaptic …
Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices
The multiple resistive switching of Pt/HfO 2/TiN devices is demonstrated as a result of a
competition between the switching at opposite metal/oxide interfaces. Three switching …
competition between the switching at opposite metal/oxide interfaces. Three switching …
Modified resistive switching performance by increasing Al concentration in HfO2 on transparent indium tin oxide electrode
In this work, a detailed improvement in the resistive switching behavior of Al-doped HfAlO-
based resistive random-access memory (RRAM) devices was studied by controlling the Al …
based resistive random-access memory (RRAM) devices was studied by controlling the Al …
Improved endurance and resistive switching stability in ceria thin films due to charge transfer ability of Al dopant
An improvement in resistive switching (RS) characteristics of CeO2-based devices has been
reported by charge transfer through Al metal as a dopant. Moreover, density functional …
reported by charge transfer through Al metal as a dopant. Moreover, density functional …
Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM
C Cai, S Wei, Z Yin, J Bai, W **e, Y Li, F Qin, Y Su… - Applied Surface …, 2021 - Elsevier
The physical mechanism of the effect of Si dopant on the formation of oxygen vacancy (VO)
and the uniformity of conductive filaments (CFs) are explored in Ta 2 O 5-based resistive …
and the uniformity of conductive filaments (CFs) are explored in Ta 2 O 5-based resistive …
Chua's circuit with tunable nonlinearity based on a nonvolatile memristor: Design and realization
Nonvolatile memristive devices display nonlinear characteristics suitable for implementing
circuits exhibiting oscillations or more complex dynamic behaviors, including chaos …
circuits exhibiting oscillations or more complex dynamic behaviors, including chaos …