Realizing topological superconductivity and Majorana zero modes in the laboratory is a
major goal in condensed-matter physics. In this Review, we survey the current status of this …

Antimonide semiconductors are suitable for low-power electronics and long-wavelength
optoelectronic applications. In recent years research on antimonide nanowires has become …

Short-wave infrared (SWIR) photodiodes (PDs) based on colloidal semiconductor quantum
dots (QDs) are characterized by the great possibility of device operation at a voltage bias of …

Indium antimony is a direct, narrow bandgap III–V semiconductor with ultrahigh carrier
mobility and an attractive optoelectronic device candidate for use in the visible to infrared …

High aspect ratios are highly desired to fully exploit the one-dimensional properties of
indium antimonide nanowires. Here we systematically investigate the growth mechanisms …

Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared
photodetectors based on a metal–semiconductor-metal (MSM) structure. The InSb …

Despite recent advances, the synthesis of colloidal InSb quantum dots (QDs) remains
underdeveloped, mostly due to the lack of suitable precursors. In this work, we use Lewis …

We report the realization of top-gated graphene nanoribbon field effect transistors
(GNRFETs) of∼ 10 nm width on large-area epitaxial graphene exhibiting the opening of a …

Highly aligned one-dimensional (1D) nanorods of the transparent conducting oxide In2O3
have been grown on (110)-oriented Y-stabilized ZrO2 substrates, whereas growth on (100) …

III–V compound semiconductors offer a path to continue Moore's law due to their excellent
electron transport properties. One major challenge, integrating III–V's on Si, can be …