The atomic layer technique is generating a lot of excitement and study due to its profound
physics and enormous potential in device fabrication. This article reviews current …

Thermal atomic layer etching (ALE) of silicon nitride was achieved using sequential
exposures of oxygen (O 2) or ozone (O 3), hydrofluoric acid (HF), and trimethylaluminum …

This work developed a plasma atomic layer etching (ALE) process for molybdenum (Mo)
with surface fluorination and ion bombardment. The Mo surface was fluorinated with CHF 3 …

To determine a suitable etching method for the fabrication of semiconductors with a few nm
or less thickness, many atomic layer etching (ALE) techniques have been studied …

Gallium oxide (Ga2O3) is a transparent semiconducting oxide with a large band gap that
has applications for power electronics and optoelectronics. Ga2O3 device fabrication …

Antireflective performance is critical for most optical devices, such as the efficient solar
energy utilization in photovoltaic cells of an aerospace craft and optical displays of scientific …

Atomic layer etching (ALE) has emerged as a promising technique for the precise and
controlled removal of materials in nanoscale devices. ALE processes have gained …

The thermal atomic layer etching (ALE) of VO 2 was demonstrated using sequential
exposures of BCl 3 and SF 4. The VO 2 etch rate measured by quartz crystal microbalance …

To improve the reuse rate of bamboo materials, laminated bamboo lumber (LBL) with high
bond strength has been developed for structural use using bamboo residues (BRs). The …

Ruthenium (Ru) is a next-generation metal interconnect material, and the demand for
precise etching is on the rise. This study explores anisotropic atomic layer etching (ALE) of …