There is a rapidly growing demand for highly efficient ultraviolet (UV) light sources for a wide
variety of applications. In particular, state-of-the-art AlGaN deep UV light-emitting diodes …

Aluminium nitride (AlN) crystalline substrate has emerged as a striking material and
received tremendous attention for applications in high power electronics (HPE), deep …

The defect structure and the homogeneity of 1–3 µm thick Al x Ga 1− x N layers grown on
epitaxially laterally overgrown (ELO) AlN on patterned AlN/sapphire templates have been …

The microscopic structural and optical characteristics of AlGaN-based light-emitting diodes
grown on AlN templates with macrosteps were evaluated. Cross-sectional transmission …

The defect distribution in thick AlN layers obtained by epitaxial lateral overgrowth (ELO-AlN)
has been analyzed as a function of the miscut direction of the patterned sapphire substrate …

The band-engineered structure design for electron-blocking layer (EBL) and hole-blocking
layer (HBL) in Al x Ga 1–x N-based ultraviolet light-emitting diodes (UV LEDs) is performed …

The radiative recombination efficiency (RRE) of AlGaN quantum wells on epitaxially laterally
overgrown AlN/sapphire templates was investigated by picosecond-laser–excited …

AlGaN is an important material for deep ultraviolet optoelectronic devices and electronic
devices. The phase separation on the AlGaN surface means small-scale compositional …

The influence of substrate miscut on Al 0.5 Ga 0.5 N layers was investigated using
cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an …

A series of Si-doped AlN-rich AlGaN layers with low resistivities was characterized by a
combination of nanoscale imaging techniques. Utilizing the capability of scanning electron …