High-performance Ge-on-Si photodetectors

J Michel, J Liu, LC Kimerling - Nature photonics, 2010 - nature.com
The past decade has seen rapid progress in research into high-performance Ge-on-Si
photodetectors. Owing to their excellent optoelectronic properties, which include high …

High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

G Chen, Y Yu, Y Shi, N Li, W Luo, L Cao… - Laser & Photonics …, 2022 - Wiley Online Library
A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …

Silicon photonics for high-capacity data communications

Y Shi, Y Zhang, Y Wan, Y Yu, Y Zhang, X Hu… - Photonics …, 2022 - opg.optica.org
In recent years, optical modulators, photodetectors,(de) multiplexers, and heterogeneously
integrated lasers based on silicon optical platforms have been verified. The performance of …

Silicon–germanium receivers for short-wave-infrared optoelectronics and communications: High-speed silicon–germanium receivers (invited review)

D Benedikovic, L Virot, G Aubin, JM Hartmann… - …, 2021 - degruyter.com
Integrated silicon nanophotonics has rapidly established itself as intriguing research field,
whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled …

Ge-photodetectors for Si-based optoelectronic integration

J Wang, S Lee - Sensors, 2011 - mdpi.com
High speed photodetectors are a key building block, which allow a large wavelength range
of detection from 850 nm to telecommunication standards at optical fiber band passes of 1.3 …

Extended performance GeSn/Si (100) pin photodetectors for full spectral range telecommunication applications

J Mathews, R Roucka, J **e, SQ Yu… - Applied physics …, 2009 - pubs.aip.org
First-generation ni-GeSn/p-Si (100) photodiode detectors with Ge 0.98 Sn 0.02 active layers
were fabricated under complementary metal oxide semiconductor compatible conditions. It …

State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

PC Eng, S Song, B ** - Nanophotonics, 2015 - degruyter.com
Photodetectors hold a critical position in optoelectronic integrated circuits, and they convert
light into electricity. Over the past decades, high-performance photodetectors (PDs) have …

Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm

RE Warburton, G Intermite, M Myronov… - … on Electron Devices, 2013 - ieeexplore.ieee.org
The design, modeling, fabrication, and characterization of single-photon avalanche diode
detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 …

Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

J Frigerio, A Ballabio, G Isella, E Sakat, G Pellegrini… - Physical Review B, 2016 - APS
Heavily doped semiconductor thin films are very promising for application in mid-infrared
plasmonic devices because the real part of their dielectric function is negative and broadly …

Room temperature operation of germanium–silicon single-photon avalanche diode

N Na, YC Lu, YH Liu, PW Chen, YC Lai, YR Lin, CC Lin… - Nature, 2024 - nature.com
The ability to detect single photons has led to the advancement of numerous research
fields,,,,,,,,,–. Although various types of single-photon detector have been developed …