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Crystal engineering for low defect density and high efficiency hybrid chemical vapor deposition grown perovskite solar cells
Synthesis of high quality perovskite absorber is a key factor in determining the performance
of the solar cells. We demonstrate that hybrid chemical vapor deposition (HCVD) growth …
of the solar cells. We demonstrate that hybrid chemical vapor deposition (HCVD) growth …
Defect healing via a gradient cooling strategy for efficient all-inorganic perovskite solar cells
J Lv, W Zhao, W Li, J Yu, M Zhang, X Han… - Journal of Materials …, 2022 - pubs.rsc.org
All-inorganic perovskites have drawn much attention because of their remarkable thermal
stability. Nevertheless, their power conversion efficiencies (PCEs) are still limited by defect …
stability. Nevertheless, their power conversion efficiencies (PCEs) are still limited by defect …
Piezo-driven non-volatile memory cell with hysteretic resistance
BG Elmegreen, L Krusin-Elbaum, XH Liu… - US Patent …, 2010 - Google Patents
Young-Tae Kimetal;" Study on Cell Characteristics of PRAMUsing the Phase-Change
Simulation.” IEEE, 2003, pp. 211-214. Stefan Lai et al;“OUM-A180 nm Nonvolatile Memory …
Simulation.” IEEE, 2003, pp. 211-214. Stefan Lai et al;“OUM-A180 nm Nonvolatile Memory …
Spherical ferroelectric PbZr0. 52Ti0. 48O3 nanoparticles with high permittivity: Switchable dielectric phase transition with temperature
Abstract The spherical ferroelectric PbZr 0.52 Ti 0.48 O 3 (PZT 52/48) nanoparticles are
prepared via simple and environment friendly high temperature solid state method. The …
prepared via simple and environment friendly high temperature solid state method. The …
Piezo-effect transistor device and applications
CJ Glassbrenner et al.;" Thermal Conductivity of Silicon and Ger manium from 3K to the
Melting Point:” Physical Review, vol. 134. No. 4A, May 18, 1964, pp. A1058-A1069. SS Lu et …
Melting Point:” Physical Review, vol. 134. No. 4A, May 18, 1964, pp. A1058-A1069. SS Lu et …
Fabrication of Pb (Zr, Ti) O3 thin films utilizing unconventional powder magnetron sputtering (PMS)
Abstract Pb (Zr, Ti) O3 (PZT) ferroelectric ceramic films exhibit highly superior ferroelectric,
pyroelectric and piezoelectric properties which are promising for a number of applications …
pyroelectric and piezoelectric properties which are promising for a number of applications …
Annealing effects on the microstructure and magnetic properties of Y3Fe5O12 films deposited on Si/SiO2 substrates by RF magnetron sputtering
J Lian, Y Chen, Z Liu, M Zhu, G Wang, W Zhang… - Ceramics …, 2017 - Elsevier
Crack-free Yttrium iron garnet (Y 3 Fe 5 O 12, YIG) thin films were successfully deposited on
Si/SiO 2 substrates by RF magnetron sputtering, through controlling the annealing …
Si/SiO 2 substrates by RF magnetron sputtering, through controlling the annealing …
Coupling piezoelectric material generated stresses to devices formed in integrated circuits
US8405279B2 - Coupling piezoelectric material generated stresses to devices formed in
integrated circuits - Google Patents US8405279B2 - Coupling piezoelectric material generated …
integrated circuits - Google Patents US8405279B2 - Coupling piezoelectric material generated …
Measurement of high piezoelectric response of strontium-doped lead zirconate titanate thin films using a nanoindenter
Strontium-doped lead zirconate titanate (PSZT) is reported to have a high piezoelectric
coefficient ( d 33) in the range of 200− 600 pm∕ V, when in the form of ceramic disks or …
coefficient ( d 33) in the range of 200− 600 pm∕ V, when in the form of ceramic disks or …
Impact of Sr-do** on structural and electrical properties of Pb (Zr0. 52Ti0. 48) O3 thin films on RuO2 electrodes
SP Bag, JL Her, TM Pan - Ceramics International, 2017 - Elsevier
In this paper, we investigated the impact of Sr-do** on the structural properties and
electrical characteristics of lead zirconate titanate [Pb (Zr 0.52 Ti 0.48) O 3, PZT] thin films …
electrical characteristics of lead zirconate titanate [Pb (Zr 0.52 Ti 0.48) O 3, PZT] thin films …