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[PDF][PDF] In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode
1. Introduction Outline: 2. Phenomenology of the 2D-3D transition 2.1. 3D morphology as a
consequence of lattice mismatch 2.2. H Page 1 ( ~ Pergamon Prog. Crystal Growth and Charact …
consequence of lattice mismatch 2.2. H Page 1 ( ~ Pergamon Prog. Crystal Growth and Charact …
Quantum dot nanostructures and molecular beam epitaxy
In order to fulfil the requirements of the information society there is a growing demand for
nanoelectronic devices with new or largely improved performances; these devices are …
nanoelectronic devices with new or largely improved performances; these devices are …
A chemically and electrochemically switchable molecular shuttle
THE develo** field of nanotechnology has generated wide interest across a broad range
of scientific disciplines1. In particular, the realization of nanoscale switching devices might …
of scientific disciplines1. In particular, the realization of nanoscale switching devices might …
From visible to white light emission by GaN quantum dots on Si (111) substrate
GaN quantum dots (QDs) in an AlN matrix have been grown on Si (111) by molecular-beam
epitaxy. The growth of GaN deposited at 800° C on AlN has been investigated in situ by …
epitaxy. The growth of GaN deposited at 800° C on AlN has been investigated in situ by …
Self-organized growth of strained InGaAs quantum disks
R Nötzel, J Temmyo, T Tamamura - Nature, 1994 - nature.com
LATERAL confinement of electrons or excitons in low-dimensional semiconductor structures
(quantum 'wires' and 'boxes') leads to new electronic properties1, which can be used to …
(quantum 'wires' and 'boxes') leads to new electronic properties1, which can be used to …
The physical origin of the two-dimensional towards three-dimensional coherent epitaxial Stranski-Krastanov transition
Epitaxial two-dimensional layer growth (2D) relayed by three-dimensional (3D) growth,
characterizes the Stranski-Krastanov growth mode. The physical origin of this transition is …
characterizes the Stranski-Krastanov growth mode. The physical origin of this transition is …
Self-formed In0. 5Ga0. 5As quantum dots on GaAs substrates emitting at 1.3 µm
Abstract We grew 1.3-µm emitting self-formed In 0.5 Ga 0.5 As quantum dots on GaAs
substrates by supplying InAs and GaAs monolayers alternately during atomic layer epitaxy …
substrates by supplying InAs and GaAs monolayers alternately during atomic layer epitaxy …
Optical investigation of the self-organized growth of InAs/GaAs quantum boxes
By studying the optical properties of highly strained InAs/GaAs multilayers as a function of
the deposited quantity of InAs, a high resolution probing of the change from two-dimensional …
the deposited quantity of InAs, a high resolution probing of the change from two-dimensional …
Relationship between self‐organization and size of InAs islands on InP (001) grown by gas‐source molecular beam epitaxy
Using the strained‐induced 2D–3D transition, InAs dots have been grown on InP (001) and
examined by transmission electron microscopy. Two different modes of island size and …
examined by transmission electron microscopy. Two different modes of island size and …
Elastic relaxation of coherent epitaxial deposits
R Kern, P Mu - Surface science, 1997 - Elsevier
The epitaxial contact between a three-dimensional (3D) deposited crystal A and its lattice
mismatched substrate B may be coherent and remain coherent during the elastic relaxation …
mismatched substrate B may be coherent and remain coherent during the elastic relaxation …