Defect engineering in SiC technology for high-voltage power devices
T Kimoto, H Watanabe - Applied Physics Express, 2020 - iopscience.iop.org
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
Material science and device physics in SiC technology for high-voltage power devices
T Kimoto - Japanese Journal of Applied Physics, 2015 - iopscience.iop.org
Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
A review of SiC IGBT: models, fabrications, characteristics, and applications
L Han, L Liang, Y Kang, Y Qiu - IEEE Transactions on Power …, 2020 - ieeexplore.ieee.org
Along with the increasing maturity for the material and process of the wide bandgap
semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing …
semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing …
Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements
We have observed significant instability in the threshold voltage of 4H-SiC metal-oxide-
semiconductor field-effect transistors due to gate-bias stressing. This effect has a strong …
semiconductor field-effect transistors due to gate-bias stressing. This effect has a strong …
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-
SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular …
SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular …
Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC (0001) interface and its correlation with electrical properties
H Watanabe, T Hosoi, T Kirino, Y Kagei… - Applied Physics …, 2011 - pubs.aip.org
The correlation between atomic structure and the electrical properties of thermally grown
SiO 2/4H-SiC (0001) interfaces was investigated by synchrotron x-ray photoelectron …
SiO 2/4H-SiC (0001) interfaces was investigated by synchrotron x-ray photoelectron …
Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors
S Dhar, S Haney, L Cheng, SR Ryu… - Journal of Applied …, 2010 - pubs.aip.org
Free electron concentration and carrier mobility measurements on 4H–SiC metal-oxide-
semiconductor inversion layers are reported in this article. The key finding is that in state-of …
semiconductor inversion layers are reported in this article. The key finding is that in state-of …
Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide
Defect accumulation and annealing phenomena in Si-implanted monoclinic gallium oxide (β-
Ga 2 O 3) wafers, having (2 01),(010), and (001) orientations, were studied by Rutherford …
Ga 2 O 3) wafers, having (2 01),(010), and (001) orientations, were studied by Rutherford …
An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors
In this study, we utilize electrically detected magnetic resonance (EDMR) techniques and
electrical measurements to study defects in SiC based metal oxide semiconductor field effect …
electrical measurements to study defects in SiC based metal oxide semiconductor field effect …
Relationship between 4H-SiC∕ SiO2 transition layer thickness and mobility
The interfacial region between silicon carbide (SiC) and its native oxide contains a high
density of interfacial traps, which is considered a major problem leading to a lower mobility …
density of interfacial traps, which is considered a major problem leading to a lower mobility …