Increasing the reliability of solid state lighting systems via self-healing approaches: A review
Reliability issues in solid state lighting (SSL) devices based on light emitting diodes (LED) is
of major concern as it is a limiting factor to promote these optoelectronic devices for general …
of major concern as it is a limiting factor to promote these optoelectronic devices for general …
Degradation mechanisms of high-power LEDs for lighting applications: An overview
This paper reports on the degradation mechanisms that limit the reliability of high-power
light-emitting diodes (LEDs) for lighting applications. The study is based on the experimental …
light-emitting diodes (LEDs) for lighting applications. The study is based on the experimental …
Temperature and do** dependence of phonon lifetimes and decay pathways in GaN
The lifetimes of polar optical phonons are known to affect both the electrical and thermal
performances of gallium nitride (GaN) based devices. Hence, understanding the dynamical …
performances of gallium nitride (GaN) based devices. Hence, understanding the dynamical …
Degradation of AlGaN-based ultraviolet light emitting diodes
Aging the LEDs by driving at high current, results in the decrease of optical power
proportional to the reciprocal square route of stress time. With aging time, change in the …
proportional to the reciprocal square route of stress time. With aging time, change in the …
Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes
Aging under high current stress of AlGaN quantum well based light emitting diodes with high
and low Al content in the wells emitting at 270 nm and 335 nm, respectively, has been …
and low Al content in the wells emitting at 270 nm and 335 nm, respectively, has been …
Degradation behavior of deep UV-LEDs studied by electro-optical methods and transmission electron microscopy
Degradation mechanism of 265-nm deep ultraviolet light emitting diodes (UV-LEDs) has
been investigated by means of electroluminescence, current-voltage measurement …
been investigated by means of electroluminescence, current-voltage measurement …
Fast neutron irradiation effects on AlGaN deep ultraviolet light emitting diodes
AlGaN-based deep ultraviolet (DUV) light emitting diodes (LEDs) are irradiated by fast
neutrons, with optical and electrical properties analyzed in detail. Significant enhancement …
neutrons, with optical and electrical properties analyzed in detail. Significant enhancement …
Color shift acceleration on mid-power LED packages
Mid-power LED packages are now widely used in many indoor illumination applications due
to several advantages. Temperature stress, humidity stress and current stress were …
to several advantages. Temperature stress, humidity stress and current stress were …
Gallium nitride (GaN) on silicon substrates for LEDs
Widespread implementation of light-emitting diodes for solid-state lighting applications has
been hindered by the high cost of the traditionally used heteroepitaxial substrates, sapphire …
been hindered by the high cost of the traditionally used heteroepitaxial substrates, sapphire …
GaN-based LEDs: State of the art and reliability-limiting mechanisms
This paper reviews the main characteristics of state-of-the art high-brightness light-emitting
diodes (LEDs), and the mechanisms responsible for the degradation of these devices. After …
diodes (LEDs), and the mechanisms responsible for the degradation of these devices. After …