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Radiation effects in SiGe technology
JD Cressler - IEEE transactions on Nuclear Science, 2013 - ieeexplore.ieee.org
Silicon-Germanium (SiGe) technology effectively merges the desirable attributes of
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …
Silicon-germanium as an enabling technology for extreme environment electronics
JD Cressler - IEEE transactions on device and materials …, 2010 - ieeexplore.ieee.org
“Extreme environment” electronics represent an important niche market in the trillion dollar
global electronics industry and span the operation of electronic circuits and systems in …
global electronics industry and span the operation of electronic circuits and systems in …
Total-ionizing-dose response of SiGe HBTs at elevated temperatures
The total-ionizing-dose response of third-generation SiGe HBTs was investigated at
elevated temperatures (80° C and 130° C) and compared with the response at 30° C. The …
elevated temperatures (80° C and 130° C) and compared with the response at 30° C. The …
Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs using 1-MeV Electrons for Europa-Surface Applications
To support the use of SiGe BiCMOS for future mission targets such as Europa, which are
subject to high radiation doses and cryogenic temperatures, SiGe heterojunction bipolar …
subject to high radiation doses and cryogenic temperatures, SiGe heterojunction bipolar …
Single event transient response of SiGe voltage references and its impact on the performance of analog and mixed-signal circuits
We investigate the single-event transient (SET) response of bandgap voltage references
(BGRs) implemented in SiGe BiCMOS technology through heavy ion microbeam …
(BGRs) implemented in SiGe BiCMOS technology through heavy ion microbeam …
SiGe BiCMOS technology: An IC design platform for extreme environment electronics applications
JD Cressler - 2007 IEEE International Reliability Physics …, 2007 - ieeexplore.ieee.org
The drivers in the extreme environment electronics community are beginning to perk up their
ears to the possibilities of using SiGe technology, especially for space electronics …
ears to the possibilities of using SiGe technology, especially for space electronics …
Proton tolerance of SiGe precision voltage references for extreme temperature range electronics
A comprehensive investigation of the effects of proton irradiation on the performance of SiGe
BiCMOS precision voltage references intended for extreme environment operational …
BiCMOS precision voltage references intended for extreme environment operational …
A new approach to designing electronic systems for operation in extreme environments: Part II-The SiGe remote electronics unit
TD England, RM Diestelhorst… - IEEE Aerospace and …, 2012 - ieeexplore.ieee.org
We have presented the architecture, simulation, packaging, and over-temperature and
radiation testing of a complex, 16-channel, extreme environment capable, SiGe Remote …
radiation testing of a complex, 16-channel, extreme environment capable, SiGe Remote …
Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs
We have investigated the effects of 50MeV lithium ion irradiation on the DC electrical
characteristics of first-generation silicon–germanium heterojunction bipolar transistors …
characteristics of first-generation silicon–germanium heterojunction bipolar transistors …
The effects of proton and X-ray irradiation on the DC and AC performance of complementary (npn+ pnp) SiGe HBTs on thick-film SOI
The impact of 63.3 MeV proton and 10 keV X-ray irradiation on the DC and AC performance
of complementary SiGe HBTs on thick-film SOI is investigated. Proton and X-ray induced …
of complementary SiGe HBTs on thick-film SOI is investigated. Proton and X-ray induced …