Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage

A Pal, S Zhang, T Chavan, K Agashiwala… - Advanced …, 2023 - Wiley Online Library
As an approximation to the quantum state of solids, the band theory, developed nearly
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …

Novel effects of strains in graphene and other two dimensional materials

B Amorim, A Cortijo, F De Juan, AG Grushin, F Guinea… - Physics Reports, 2016 - Elsevier
The analysis of the electronic properties of strained or lattice deformed graphene combines
ideas from classical condensed matter physics, soft matter, and geometrical aspects of …

k· p theory for two-dimensional transition metal dichalcogenide semiconductors

A Kormányos, G Burkard, M Gmitra, J Fabian… - 2D …, 2015 - iopscience.iop.org
We presentk p· Hamiltonians parametrized byab initiodensity functional theory calculations
to describe the dispersion of the valence and conduction bands at their extrema (theK, Q, Γ …

Trion fine structure and coupled spin–valley dynamics in monolayer tungsten disulfide

G Plechinger, P Nagler, A Arora, R Schmidt… - Nature …, 2016 - nature.com
Monolayer transition-metal dichalcogenides have recently emerged as possible candidates
for valleytronic applications, as the spin and valley pseudospin are directly coupled and …

Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides

A Kormányos, V Zólyomi, ND Drummond, G Burkard - Physical Review X, 2014 - APS
We derive an effective Hamiltonian that describes the dynamics of electrons in the
conduction band of monolayer transition metal dichalcogenides (TMDC) in the presence of …

Valley depolarization due to intervalley and intravalley electron-hole exchange interactions in monolayer

T Yu, MW Wu - Physical Review B, 2014 - APS
We investigate the valley depolarization due to the electron-hole exchange interaction in
monolayer MoS 2. Both the long-and short-range parts of the intra-and intervalley electron …

Electronic properties of single‐layer and multilayer transition metal dichalcogenides MX2 (M = Mo, W and X = S, Se)

R Roldán, JA Silva‐Guillén… - Annalen der …, 2014 - Wiley Online Library
Single‐and few‐layer transition metal dichalcogenides have recently emerged as a new
family of layered crystals with great interest, not only from the fundamental point of view, but …

Optically initialized robust valley-polarized holes in monolayer WSe2

WT Hsu, YL Chen, CH Chen, PS Liu, TH Hou… - Nature …, 2015 - nature.com
A robust valley polarization is a key prerequisite for exploiting valley pseudospin to carry
information in next-generation electronics and optoelectronics. Although monolayer …

Theory of strain in single-layer transition metal dichalcogenides

H Rostami, R Roldán, E Cappelluti, R Asgari, F Guinea - Physical Review B, 2015 - APS
Strain engineering has emerged as a powerful tool to modify the optical and electronic
properties of two-dimensional crystals. Here we perform a systematic study of strained …

Intravalley Spin–Flip Relaxation Dynamics in Single-Layer WS2

Z Wang, A Molina-Sanchez, P Altmann, D Sangalli… - Nano Letters, 2018 - ACS Publications
In monolayer (1L) transition metal dichalcogenides (TMDs) the valence and conduction
bands are spin-split because of the strong spin–orbit interaction. In tungsten-based TMDs …