Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage
As an approximation to the quantum state of solids, the band theory, developed nearly
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …
Novel effects of strains in graphene and other two dimensional materials
The analysis of the electronic properties of strained or lattice deformed graphene combines
ideas from classical condensed matter physics, soft matter, and geometrical aspects of …
ideas from classical condensed matter physics, soft matter, and geometrical aspects of …
k· p theory for two-dimensional transition metal dichalcogenide semiconductors
We presentk p· Hamiltonians parametrized byab initiodensity functional theory calculations
to describe the dispersion of the valence and conduction bands at their extrema (theK, Q, Γ …
to describe the dispersion of the valence and conduction bands at their extrema (theK, Q, Γ …
Trion fine structure and coupled spin–valley dynamics in monolayer tungsten disulfide
Monolayer transition-metal dichalcogenides have recently emerged as possible candidates
for valleytronic applications, as the spin and valley pseudospin are directly coupled and …
for valleytronic applications, as the spin and valley pseudospin are directly coupled and …
Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides
We derive an effective Hamiltonian that describes the dynamics of electrons in the
conduction band of monolayer transition metal dichalcogenides (TMDC) in the presence of …
conduction band of monolayer transition metal dichalcogenides (TMDC) in the presence of …
Valley depolarization due to intervalley and intravalley electron-hole exchange interactions in monolayer
We investigate the valley depolarization due to the electron-hole exchange interaction in
monolayer MoS 2. Both the long-and short-range parts of the intra-and intervalley electron …
monolayer MoS 2. Both the long-and short-range parts of the intra-and intervalley electron …
Electronic properties of single‐layer and multilayer transition metal dichalcogenides MX2 (M = Mo, W and X = S, Se)
Single‐and few‐layer transition metal dichalcogenides have recently emerged as a new
family of layered crystals with great interest, not only from the fundamental point of view, but …
family of layered crystals with great interest, not only from the fundamental point of view, but …
Optically initialized robust valley-polarized holes in monolayer WSe2
A robust valley polarization is a key prerequisite for exploiting valley pseudospin to carry
information in next-generation electronics and optoelectronics. Although monolayer …
information in next-generation electronics and optoelectronics. Although monolayer …
Theory of strain in single-layer transition metal dichalcogenides
Strain engineering has emerged as a powerful tool to modify the optical and electronic
properties of two-dimensional crystals. Here we perform a systematic study of strained …
properties of two-dimensional crystals. Here we perform a systematic study of strained …
Intravalley Spin–Flip Relaxation Dynamics in Single-Layer WS2
In monolayer (1L) transition metal dichalcogenides (TMDs) the valence and conduction
bands are spin-split because of the strong spin–orbit interaction. In tungsten-based TMDs …
bands are spin-split because of the strong spin–orbit interaction. In tungsten-based TMDs …