Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronics applications: A comprehensive review
In this review, we explore the last fifty years of Metal-Insulator-Semiconductor (MIS) Schottky
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …
Colossal photosensitive boost in Schottky diode behaviour with Ce-V2O5 interfaced layer of MIS structure
V Balasubramani, J Chandrasekaran… - Sensors and Actuators A …, 2020 - Elsevier
In the present work, we have fabricated a highly photo responsive Schottky barrier diode
based on cerium infused vanadium pentoxide thin film (Ce-V 2 O 5) as a interfacial layer. It …
based on cerium infused vanadium pentoxide thin film (Ce-V 2 O 5) as a interfacial layer. It …
Upgraded photosensitivity under the influence of Yb doped on V2O5 thin films as an interfacial layer in MIS type Schottky barrier diode as photodiode application
V Balasubramani, J Chandrasekaran… - Journal of Solid State …, 2021 - Elsevier
In this study, rare earth ytterbium (Yb)-doped V 2 O 5 thin films were effectively coated on
glass and Si substrates by the sol-gel method combined with the spin coating method. The …
glass and Si substrates by the sol-gel method combined with the spin coating method. The …
Superior role of V2O5 and yttrium interface layers in enhancing MIS radical photodiode performance
In this study, Cu/n-Si Schottky diodes with V 2 O 5–Y insulating interface layer were
designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of …
designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of …
Insertion of Ga-MoO3 thin film at Cu/p-Si interface for the fabrication of MIS structure Schottky barrier diodes
The fabrication of a metal-insulator-semiconductor diode with a pure MoO 3 and different
weight% of Ga-MoO 3 (5, 10, and 15 wt%) thin film insulator layer grown by JNSP …
weight% of Ga-MoO 3 (5, 10, and 15 wt%) thin film insulator layer grown by JNSP …
Enhanced photosensitive of Schottky diodes using SrO interfaced layer in MIS structure for optoelectronic applications
V Balasubramani, PV Pham, A Ibrahim, J Hakami… - Optical Materials, 2022 - Elsevier
In this study, the Schottky diodes (SDs) based on an interfacial layer of strontium oxide (SrO)
thin film were fabricated. Thin films (TFs) were coated on glass and silicon substrates by low …
thin film were fabricated. Thin films (TFs) were coated on glass and silicon substrates by low …
Improved photodetector performance of high-k dielectric material (La) doped V2O5 thin films as an interfacial layer in Schottky barrier diodes
V Balasubramani, J Chandrasekaran… - Surfaces and …, 2021 - Elsevier
In this work, high-k dielectric material of lanthanum (La) doped vanadium pentoxide (V 2 O
5) thin films is deposited on glass substrate using spin coating route and annealed at 500° …
5) thin films is deposited on glass substrate using spin coating route and annealed at 500° …
Influence of high dielectric HfO2 thin films on the electrical properties of Al/HfO2/n-Si (MIS) structured Schottky barrier diodes
The presence of high dielectric material between the metal and semiconductor interface
played a significant role in many electronic device applications. In this work, we have …
played a significant role in many electronic device applications. In this work, we have …
[HTML][HTML] Physical, chemical, electronic and optical properties of CuO/NiO@ n-Si thin films by drop casting method for p–n junction diode
E Arulkumar, S Thanikaikarasan - Chemical Physics Impact, 2023 - Elsevier
The development of photodetector technology is the outcome of diverse research in
materials science, device engineering, and manufacturing methods. Hence, we synthesized …
materials science, device engineering, and manufacturing methods. Hence, we synthesized …
Augmented photovoltaic performance of Cu/Ce-(Sn: Cd)/n-Si Schottky barrier diode utilizing dual-doped Ce-(Sn: Cd) thin films
In the current investigation, we are fabricated the Schottky barrier diode (SBDs) formed on
dual doped Ce-(Sn: Cd)(1, 3 and 5 wt%) thin films. The film was prepared by spray pyrolysis …
dual doped Ce-(Sn: Cd)(1, 3 and 5 wt%) thin films. The film was prepared by spray pyrolysis …