We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

Resonant inelastic x-ray scattering (RIXS) has recently been a subject of remarkable
progress due to the advent of high-brilliance synchrotron radiation sources. The authors …

At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

A theoretical study of Al 1− x Ga x N⁠, based on the full-potential linearized augmented
plane wave method, is used to investigate the variations in the bandgap, optical properties …

Electron energy‐loss near‐edge structure (ELNES) is a technique that can be used to
measure the electronic structure (ie bonding) in materials with subnanometre spatial …

First-principles calculations, by means of the full-potential augmented plane wave method
using the local density approximation, were carried out for the structural and electronic …

A comprehensive study of the electronic structure of group-III nitrides (AlN, GaN, InN, and
BN) crystallizing in the wurtzite, zinc-blende, and graphitelike hexagonal (BN) structures is …

Numerical simulation based on first-principles calculations is applied to study the structural
characteristics and band-energy properties of the zincblende InxGa1− xN. The deviation …

The influence of shallow core-level hybridization on the electronic structure of the post-
transition metal oxides ZnO, CdO, In 2 O 3, and SnO 2 has been investigated using high …

In the last couple of decades, high-performance electronic and optoelectronic devices based
on semiconductor heterostructures have been required to obtain increasingly strict and well …