This article reviews the design and evaluation of different DC-DC converter topologies for
Battery Electric Vehicles (BEVs) and Plug-in Hybrid Electric Vehicles (PHEVs). The design …

Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …

Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …

In this study, ultra-small nano-Ag particles with an average diameter of 4.76 nm and
excellent stability have been synthesized on a large scale to meet low-temperature, low …

Silicon carbide (SiC) MOSFET featuring faster switching speed, higher breakdown voltage,
and excellent thermal conductivity is widely used in power converters to improve their …

This paper reviewed the state-of-the-art wide band-gap (WBG) technology from material
level to system level. The properties of semiconductor materials, ie, silicon carbide and …

In this paper, a resonant gate driver for silicon carbide power MOSFET is proposed. This
resonant gate driver contains four N-MOSFETs, a resonant inductor, and a capacitor. The …

In HV (high-voltage) and HF (high-frequency) applications, SiC (silicon carbide) MOSFET is
widely used for its small parasitic characteristics and fast switching speed. Using discrete …

This article presents a novel single-switch discontinuous current-source gate driver (CSD)
with voltage boosting capability appropriate for ultralow voltage applications. The power …

Shorter voltage and current rise/fall time are the main driving forces for nanosecond pulse
power technology. The switching capabilities of SiC-MOSFET directly determine the …