Dual-band photodetectors have attracted intensive attention because of the requirement of
multiband information [such as visible (VIS) and near-infrared (NIR)] in multicolor imaging …

The effects of luminescence coupling on the external quantum efficiency (EQE)
measurement of an InGaP/InGaAs/Ge triple junction solar cell were investigated. A small …

Extending and controlling the spectral range of light detectors is very appealing for several
sensing and imaging applications. Here we report on a normal incidence dual band …

Heterovalent structures consisting of group II-VI/group III-V compound semiconductors offer
attractive properties, such as a very broad range of bandgaps, large conduction band …

The typical photodetectors can only detect one specific optical spectral band, such as
InGaAs and graphene-PbS quantum dots for near-infrared (NIR) light detection, CdS and Si …

We demonstrated the dual-detectable DNA-CTMA/n-GaN photodiode (DG-PD) for ultraviolet
and visible lights. Halogen and UV lamps are employed to recognize the visible and UV …

Multi-band photodetectors can be formed by series connect ing unipolar and, optionally,
bipolar semiconductor struc tures, each having different photodetection bands. Under …

Optically addressed dual-band photodetector incorporating of a 0.82 μm cut-off wavelength
near-infrared (NIR) AlGaAs/GaAs pin photodetector and a 8.2 μm peak wavelength long …

We have demonstrated an 820 nm cutoff CdTe nBn photodetector with ZnTe barrier layer
grown on an InSb substrate. At room temperature, under a bias of− 0.1 V, the photodetector …

The effect of a ZnSe/ZnS/GaAs distributed Bragg reflector on the spectral response of a
metal–semiconductor–metal (MSM)-diode is investigated. Good agreement is obtained …