Stacking order engineering of two-dimensional materials and device applications
Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral
displacement) and twisting (rotation) between atomically thin layers. By altering the stacking …
displacement) and twisting (rotation) between atomically thin layers. By altering the stacking …
Oxide Spintronics as a Knot of Physics and Chemistry: Recent Progress and Opportunities
Transition-metal oxides (TMOs) constitute a key material family in spintronics because of
mutually coupled degrees of freedom and tunable magneto-ionic properties. In this …
mutually coupled degrees of freedom and tunable magneto-ionic properties. In this …
Coexistence and coupling of ferroelectricity and magnetism in an oxide two-dimensional electron gas
Multiferroics are compounds in which at least two ferroic orders coexist, typically
ferroelectricity and some form of magnetism. While magnetic order can arise in both …
ferroelectricity and some form of magnetism. While magnetic order can arise in both …
[HTML][HTML] Roadmap to neuromorphic computing with emerging technologies
The growing adoption of data-driven applications, such as artificial intelligence (AI), is
transforming the way we interact with technology. Currently, the deployment of AI and …
transforming the way we interact with technology. Currently, the deployment of AI and …
Light‐Induced Giant Rashba Spin–Orbit Coupling at Superconducting KTaO3(110) Heterointerfaces
The 2D electron system (2DES) at the KTaO3 surface or heterointerface with 5d orbitals
hosts extraordinary physical properties, including a stronger Rashba spin–orbit coupling …
hosts extraordinary physical properties, including a stronger Rashba spin–orbit coupling …
Spin-orbit torque switching of magnetic tunnel junctions for memory applications
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse
classes of materials and devices using electric currents, leading to novel spintronic memory …
classes of materials and devices using electric currents, leading to novel spintronic memory …
Electrical control of magnetism by electric field and current-induced torques
While early magnetic memory designs relied on magnetization switching by locally
generated magnetic fields, key insights in condensed matter physics later suggested the …
generated magnetic fields, key insights in condensed matter physics later suggested the …
Antiferromagnetic insulatronics: Spintronics in insulating 3d metal oxides with antiferromagnetic coupling
Antiferromagnetic transition metal oxides are an established and widely studied materials
system in the context of spin-based electronics, commonly used as passive elements in …
system in the context of spin-based electronics, commonly used as passive elements in …
Origin of Topological Hall‐Like Feature in Epitaxial SrRuO3 Thin Films
The discovery of topological Hall effect (THE) has important implications for next‐generation
high‐density nonvolatile memories, energy‐efficient nanoelectronics, and spintronic …
high‐density nonvolatile memories, energy‐efficient nanoelectronics, and spintronic …
Underlying Mechanisms and Tunability of the Anomalous Hall Effect in NiCo2O4 Films with Robust Perpendicular Magnetic Anisotropy
Their high tunability of electronic and magnetic properties makes transition‐metal oxides
(TMOs) highly intriguing for fundamental studies and promising for a wide range of …
(TMOs) highly intriguing for fundamental studies and promising for a wide range of …