Stacking order engineering of two-dimensional materials and device applications

C Fox, Y Mao, X Zhang, Y Wang, J **ao - Chemical Reviews, 2023 - ACS Publications
Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral
displacement) and twisting (rotation) between atomically thin layers. By altering the stacking …

Oxide Spintronics as a Knot of Physics and Chemistry: Recent Progress and Opportunities

Q Wang, Y Gu, C Chen, F Pan… - The Journal of Physical …, 2022 - ACS Publications
Transition-metal oxides (TMOs) constitute a key material family in spintronics because of
mutually coupled degrees of freedom and tunable magneto-ionic properties. In this …

Coexistence and coupling of ferroelectricity and magnetism in an oxide two-dimensional electron gas

J Bréhin, Y Chen, M D'Antuono, S Varotto… - Nature Physics, 2023 - nature.com
Multiferroics are compounds in which at least two ferroic orders coexist, typically
ferroelectricity and some form of magnetism. While magnetic order can arise in both …

[HTML][HTML] Roadmap to neuromorphic computing with emerging technologies

A Mehonic, D Ielmini, K Roy, O Mutlu, S Kvatinsky… - APL Materials, 2024 - pubs.aip.org
The growing adoption of data-driven applications, such as artificial intelligence (AI), is
transforming the way we interact with technology. Currently, the deployment of AI and …

Light‐Induced Giant Rashba Spin–Orbit Coupling at Superconducting KTaO3(110) Heterointerfaces

Y Gan, F Yang, L Kong, X Chen, H Xu… - Advanced …, 2023 - Wiley Online Library
The 2D electron system (2DES) at the KTaO3 surface or heterointerface with 5d orbitals
hosts extraordinary physical properties, including a stronger Rashba spin–orbit coupling …

Spin-orbit torque switching of magnetic tunnel junctions for memory applications

V Krizakova, M Perumkunnil, S Couet… - Journal of Magnetism …, 2022 - Elsevier
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse
classes of materials and devices using electric currents, leading to novel spintronic memory …

Electrical control of magnetism by electric field and current-induced torques

A Fert, R Ramesh, V Garcia, F Casanova… - arxiv preprint arxiv …, 2023 - arxiv.org
While early magnetic memory designs relied on magnetization switching by locally
generated magnetic fields, key insights in condensed matter physics later suggested the …

Antiferromagnetic insulatronics: Spintronics in insulating 3d metal oxides with antiferromagnetic coupling

H Meer, O Gomonay, A Wittmann, M Kläui - Applied Physics Letters, 2023 - pubs.aip.org
Antiferromagnetic transition metal oxides are an established and widely studied materials
system in the context of spin-based electronics, commonly used as passive elements in …

Origin of Topological Hall‐Like Feature in Epitaxial SrRuO3 Thin Films

P Roy, A Carr, T Zhou, B Paudel… - Advanced Electronic …, 2023 - Wiley Online Library
The discovery of topological Hall effect (THE) has important implications for next‐generation
high‐density nonvolatile memories, energy‐efficient nanoelectronics, and spintronic …

Underlying Mechanisms and Tunability of the Anomalous Hall Effect in NiCo2O4 Films with Robust Perpendicular Magnetic Anisotropy

H Lv, XC Huang, KHL Zhang, O Bierwagen… - Advanced …, 2023 - Wiley Online Library
Their high tunability of electronic and magnetic properties makes transition‐metal oxides
(TMOs) highly intriguing for fundamental studies and promising for a wide range of …