Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

In this study, we investigate a Ni/WO x/ITO-glass memristor device to verify short-term
memory characteristics for reservoir computing systems. We verify the chemical and material …

To inaugurate energy-efficient hardware as a solution to complex tasks, information
processing paradigms shift from von Neumann to non-von Neumann computing …

Lately, there has been a rapid increase in the use of software-based deep learning neural
networks (S-DNN) for the analysis of unstructured data consumption. For implementation of …

Neuromorphic capabilities of a self-aligned complementary metal-oxide-semiconductor
compatible W/WO x/HfO 2/Ru cell in a 3D vertical memristive structure were investigated. We …

The resistive switching behavior of W/WO 3− x/HfO 2/Pd structures with different WO 3− x
thicknesses was investigated. It was found that WO 3− x layer thickness plays a pivotal role …

Memristors are crucial in computing due to their potential for miniaturization, energy
efficiency, and rapid switching, making them particularly suited for advanced applications …

To overcome the limitations of CMOS digital systems, emerging computing circuits such as
memristor crossbars have been investigated as potential candidates for significantly …

In this research, we propose a method that can significantly improve the linearity of current–
voltage characteristics (L–IV) of synapse devices. Considering that analog input data are …

In hardware neural networks (HNNs), different operating temperatures cause variation in
conductance of resistive arrays, and they can significantly distort the information of the …