It is commonly accepted that the performance and time-to-failure of modern semiconductor
transistors are seriously affected by single defects located in the insulator or at the insulator …

Hydrogen monitoring with reliable, fast and cheap sensors is crucial to fully exploit the
potential of this gas as an energy vector. One of the most appealing technologies for …

While the bias temperature instability has provided many puzzles for more than half a
century, the observation that bipolar (+ V g/-V g) AC stress can lead to larger degradation …

Over the past decades, the continued scaling of transistors has reduced the energy
consumption for every switching event and has increased the computational power of …

A single photon avalanche diode (SPAD) cell using N-channel extended-drain metal oxide
semiconductor (N-EDMOS) is tested for its hot-carrier damage (HCD) resistance. The …

CMOS technology operated at cryogenic temperatures is essential in various fields such as
quantum computing (QC), where it serves as a classical control interface for qubits operating …

It is well established that the bias temperature instability (BTI) mechanism alters the Vth
distribution with reliability implications to balanced analog circuits. This paper presents a …

Oxygen vacancies in SiO2 and dangling silicon bonds at the Si/SiOΣ2 interface are the most
significant gate-dielectric defects that limit the performance, reliability, and radiation …

This work presents the impact of interface trap charges present at Si/SiO_2 interface on
I_ON/I_OFF ratio of double gate junctionless transistor (DG-JLT). DG-JLT is used to …

Capacitance-voltage (CV) measurements on MOS structures are inherently difficult to
analyze due to the socalled stretch-out, which results from defects becoming charged during …