[HTML][HTML] Tutorial: Microscopic properties of O–H centers in β-Ga2O3 revealed by infrared spectroscopy and theory
β-Ga 2 O 3 is an ultrawide bandgap semiconductor that is attracting much attention for
applications in next-generation high-power, deep UV, and extreme-environment devices …
applications in next-generation high-power, deep UV, and extreme-environment devices …
Defects and do** in ultra-wide band gap (Al,Ga)N and β-(Al,Ga)2O3 alloys
F Tuomisto - Journal of Materials Research, 2024 - Springer
Si is the n-type dopant of choice for GaN and β-Ga2O3. However, in (Al, Ga) N and β-(Al,
Ga) 2O3 alloys, when the Al content is increased, the n-type conductivity produced by the …
Ga) 2O3 alloys, when the Al content is increased, the n-type conductivity produced by the …
Thermal Stability of Schottky Contacts and Rearrangement of Defects in β‐Ga2O3 Crystals
The thermal stability of different Schottky contacts (Au, Pt, and Ni) on (100) β‐Ga2O3 single
crystals grown by the Czochralski method is investigated. Besides the examination of the …
crystals grown by the Czochralski method is investigated. Besides the examination of the …
[HTML][HTML] On the nature of as-grown and irradiation-induced Ga vacancy defects in β-Ga2O3
We have applied positron annihilation spectroscopy to study the vacancy-type defects in β-
Ga 2 O 3 single crystals. The three different types of crystals were prepared by Czochralski …
Ga 2 O 3 single crystals. The three different types of crystals were prepared by Czochralski …
Ion energy dependence of dry etch damage depth in Ga2O3 Schottky rectifiers
The β-polytype of Ga 2 O 3 has a high critical electric field strength (∼ 8 MV. cm− 1) and can
be grown as large diameter (6 in.) single crystal boules by inexpensive melt-growth …
be grown as large diameter (6 in.) single crystal boules by inexpensive melt-growth …
[HTML][HTML] Diffusion of Sn donors in β-Ga2O3
Diffusion of the n-type dopant Sn in β-Ga2O3 is studied using secondary-ion mass
spectrometry combined with hybrid functional calculations. The diffusion of Sn from a Sn …
spectrometry combined with hybrid functional calculations. The diffusion of Sn from a Sn …
Unveiling interface engineering dynamics between Ti and Ga2O3 nanowire
In this study, we investigate the interfacial reactions between Ga 2 O 3 nanowires (NWs) and
Ti contacts during annealing processes through in-situ transmission electron microscopy …
Ti contacts during annealing processes through in-situ transmission electron microscopy …
Oxygen and aluminum tracer diffusion in oriented single crystals
J Uhlendorf, H Schmidt - Physical Review Materials, 2023 - APS
β-G a 2 O 3 is an ultrawide band-gap semiconductor with importance for various
technological applications. We investigated the tracer diffusion of oxygen and aluminum (as …
technological applications. We investigated the tracer diffusion of oxygen and aluminum (as …
[HTML][HTML] Simulating charged defects at database scale
Point defects have a strong influence on the physical properties of materials, often
dominating the electronic and optical behavior in semiconductors and insulators. The …
dominating the electronic and optical behavior in semiconductors and insulators. The …
Trap-limited diffusion of Zn in
Diffusion of Zn in (001)-and (2¯ 01)-oriented β-Ga 2 O 3 was studied using secondary-ion
mass spectrometry and first-principles calculations based on hybrid and semilocal …
mass spectrometry and first-principles calculations based on hybrid and semilocal …