Electronics and optoelectronics based on tellurium
As a true 1D system, group‐VIA tellurium (Te) is composed of van der Waals bonded
molecular chains within a triangular crystal lattice. This unique crystal structure endows Te …
molecular chains within a triangular crystal lattice. This unique crystal structure endows Te …
Giant nonlinear Hall and wireless rectification effects at room temperature in the elemental semiconductor tellurium
B Cheng, Y Gao, Z Zheng, S Chen, Z Liu… - Nature …, 2024 - nature.com
The second-order nonlinear Hall effect (NLHE) in non-centrosymmetric materials has
recently drawn intense interest, since its inherent rectification could enable various device …
recently drawn intense interest, since its inherent rectification could enable various device …
Single‐Orientation Epitaxy of Quasi‐1D Tellurium Nanowires on M‐Plane Sapphire for Highly Uniform Polarization Sensitive Short‐Wave Infrared Photodetection
X Wei, S Wang, N Zhang, Y Li, Y Tang… - Advanced Functional …, 2023 - Wiley Online Library
Tellurium (Te), an elemental van der Waals semiconductor, has intriguing anisotropic
physical properties owing to its inherent quais‐1D crystal structure. Synthesizing ultrathin Te …
physical properties owing to its inherent quais‐1D crystal structure. Synthesizing ultrathin Te …
Achieving reliable and ultrafast memristors via artificial filaments in silk fibroin
The practical implementation of memristors in neuromorphic computing and biomimetic
sensing suffers from unexpected temporal and spatial variations due to the stochastic …
sensing suffers from unexpected temporal and spatial variations due to the stochastic …
Room-temperature valley transistors for low-power neuromorphic computing
Valley pseudospin is an electronic degree of freedom that promises highly efficient
information processing applications. However, valley-polarized excitons usually have short …
information processing applications. However, valley-polarized excitons usually have short …
A 2D Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing
The demand for economical and efficient data processing has led to a surge of interest in
neuromorphic computing based on emerging two‐dimensional (2D) materials in recent …
neuromorphic computing based on emerging two‐dimensional (2D) materials in recent …
Monolithic three-dimensional integration with 2D material-based p-type transistors
Monolithic three-dimensional (M3D) integration offers a promising solution to the limitations
of silicon (Si) integrated circuits as they reach their physical limits, including problems with …
of silicon (Si) integrated circuits as they reach their physical limits, including problems with …
Atomic‐scale interface engineering for two‐dimensional materials based field‐effect transistors
Abstract Two‐dimensional (2D) materials with free of dangling bonds have the potential to
serve as ideal channel materials for the next generation of field‐effect transistors (FETs) due …
serve as ideal channel materials for the next generation of field‐effect transistors (FETs) due …
Magnetoresistive-coupled transistor using the Weyl semimetal NbP
Semiconductor transistors operate by modulating the charge carrier concentration of a
channel material through an electric field coupled by a capacitor. This mechanism is …
channel material through an electric field coupled by a capacitor. This mechanism is …
Gate Modulation of Dissipationless Nonlinear Quantum Geometric Current in 2D Te
Two-dimensional trigonal tellurium (2D Te), a narrow-bandgap semiconductor with a
bandgap of approximately 0.3 eV, hosts Weyl points near the band edge and exhibits a …
bandgap of approximately 0.3 eV, hosts Weyl points near the band edge and exhibits a …