Native point defects control many aspects of semiconductor behavior. Such defects can be
electrically charged, both in the bulk and on the surface. This charging can affect numerous …

Abstract The Kinetic Monte Carlo (KMC) algorithm is a particularly apt technique to simulate
the complex processing of semiconductor devices. In this review, some of the main …

In this work, we introduce the Object Kinetic Monte Carlo (OKMC) simulator MMonCa and
simulate the defect evolution in three different materials. We start by explaining the theory of …

Front-end processing mostly deals with technologies associated to junction formation in
semiconductor devices. Ion implantation and thermal anneal models are key to predict …

In order to simulate the diffusion kinetics during thermal treatments in SiGe heterostructures,
a physically-based atomistic model including chemical and strain effects has been …

This work will show how the kinetic Monte Carlo (KMC) technique is able to successfully
model the defects and diffusion of dopants in Si-based materials for advanced …

In this work we present models and simulation results for diffusion in strained SiGe
heterostructures. Our approach makes a comprehensive, physically-based, treatment of …

Studying temperature effects on defect behaviors during thermal annealing is significant for
understanding the performance degradation and recovery of semiconductor devices under …

Threshold voltage shift is a major problem for UMOS device. This study explains how device
performance can be affected by silicon defects (interstitial and Vacancy). Interstitial may be …

In this paper, accurate and advanced CMOS process and device simulations based on
atomistic kinetic Monte Carlo (kMC) process simulator are presented. First, the methodology …