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Insights into the design principles of JF-ED-VTFET for biosensing application
In this research article, we have designed a junction-free electrostatically doped vertical
tunnel field-effect transistor (JF-ED-VTEFT) for label-free biosensing applications. We …
tunnel field-effect transistor (JF-ED-VTEFT) for label-free biosensing applications. We …
Design and integration of vertical TFET and memristor for better realization of logical functions
This paper deals the hybridization of tunnel FET with the memristor for better execution of
combinational and sequential circuits. Here, device structure of vertical tunnel FET and …
combinational and sequential circuits. Here, device structure of vertical tunnel FET and …
Assessment of hetero-structure junction-less tunnel FET's efficacy for biosensing applications
This work discusses a junction-less nanowire tunnel field effect transistor (JLN-TFET) that
combines the advantages of a junction-less field effect transistor (JLFET) and a tunnel field …
combines the advantages of a junction-less field effect transistor (JLFET) and a tunnel field …
Evaluation of Design and Performance of Biosensor Utilizing Ferroelectric Vertical Tunnel Field-Effect Transistor (V-TFET)
In this work, a novel Ferroelectric gate oxide along with high-k dielectric HfO2 is introduced
in the Vertical TFET structure to incorporate the negative capacitance effect. The effects of …
in the Vertical TFET structure to incorporate the negative capacitance effect. The effects of …
Comparative investigation of low-power ferroelectric material embedded with different heterojunction vertical TFET structures
S Singh - Journal of Materials Science: Materials in Electronics, 2022 - Springer
This paper basically proposes and compares three different configurations of ferroelectric
oxide material on silicon body of vertical tunnel field-effect transistor. The charge plasma …
oxide material on silicon body of vertical tunnel field-effect transistor. The charge plasma …
Design and Performance Analysis of Negative Capacitance Effect in the Charge Plasma-Based Junction-Less Vertical TFET Structure
In this paper, a negative capacitance (NC) effect in series with normal oxide capacitance is
first time introduced to design negative capacitance charge plasma-based junction less …
first time introduced to design negative capacitance charge plasma-based junction less …
Comparative analysis of Change plasma and Junctionless Ferroelectric tunneling junction of VTFET for improved performance
S Singh - Silicon, 2023 - Springer
The effect of ferroelectric material at tunneling junction is compared for the two different
configuration of Charge plasma and Junctionless of Vertical TFET structure. Various …
configuration of Charge plasma and Junctionless of Vertical TFET structure. Various …
Synergistic Effect of Ferroelectric and HfO2/SiO2 Hetero dielectrics in Junctionless FET for Analog and RF Applications
The synergistic effect of ferroelectric and HfO2/SiO2 (Hafnium dioxide/Silicon dioxide) hetero
dielectrics in double gate Junctionless Field Effect Transistor is investigated using TCAD …
dielectrics in double gate Junctionless Field Effect Transistor is investigated using TCAD …
Insights into the Design Principle of Heterojunction Ferro Dioxide Charge Plasma Vertical TFET for Biosensing Application
Insights into the Design Principle of Heterojunction Ferro Dioxide Charge Plasma Vertical TFET
for Biosensing Application - Yubetsu Shibata Yubetsu Shibata logo About Browse For …
for Biosensing Application - Yubetsu Shibata Yubetsu Shibata logo About Browse For …