Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …

Advances in the theory of semiconductors in the 1930s in addition to the purification of
germanium and silicon crystals in the 1940s enabled the point-contact junction transistor in …

The tunnel field-effect transistor (TFET) is considered a future transistor option due to its
steep-slope prospects and the resulting advantages in operating at low supply voltage (V …

In this paper, we have investigated device reliability by studying the impact of interface traps,
both donor (positive interface charges) and acceptor (negative interface charges), present at …

We provide a detailed study of the oxide-semiconductor interface trap assisted tunneling
(TAT) mechanism in tunnel FETs to show how it contributes a major leakage current path …

In this brief, we demonstrate using 2-D simulations that the use of a heterodielectric BOX
(HDB) above a highly doped ground plane can control the tunneling width at the channel …

This work investigates the impact of different types of interface trap charges (ITCs) on
electrical parameters of split source horizontal pocket Z shape TFET (ZHP-TFET) and Hetero …

This paper investigates the reliability of PINgate-all-around (GAA)-tunnel field-effect
transistor (TFET) with N±source pocket. The reliability of the PNIN-GAA-TFET is examined …

The reliability of the CMOS devices is severely affected due to the presence of interface (S
i/S i O 2) trap charges and self-heating effect (SHE). In this paper, we investigated the trap …

This manuscript exclusively addresses the reliability concern of a double-drain vertical TFET
(DD-VTFET) by analysing the influence of interface trap charges and variation in ambient …