[HTML][HTML] On the asymmetry of resistive switching transitions

G Vinuesa, H García, E Pérez, C Wenger… - Electronics, 2024 - mdpi.com
In this study, the resistive switching phenomena in TiN/Ti/HfO2/Ti metal–insulator–metal
stacks is investigated, mainly focusing on the analysis of set and reset transitions. The …

[HTML][HTML] Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

F Jiménez-Molinos, G Vinuesa, H García… - Materials Science in …, 2024 - Elsevier
The dependence of the current in TiN/Ti/HfO 2/W devices on the temperature is investigated
in the range from 78 K to 340 K. Resistive switching cycles at 78 K are conducted to explore …

Dynamics of set and reset processes in HfO2-based bipolar resistive switching devices

G Vinuesa, H García, MB González… - Microelectronic …, 2025 - Elsevier
The temporal evolution of the set and reset processes in TiN/Ti/HfO 2/W metal-insulator-
metal devices exhibiting resistive switching behavior is investigated in depth. To this end …

Era of Sentinel Tech: Charting Hardware Security Landscapes through Post-Silicon Innovation, Threat Mitigation and Future Trajectories

MBR Srinivas, E Konguvel - IEEE Access, 2024 - ieeexplore.ieee.org
To meet the demanding requirements of VLSI design, including improved speed, reduced
power consumption, and compact architectures, various IP cores from trusted and untrusted …

The effect of switching and cycle-to-cycle variations of RRAM on 4-bit encryption/decryption process

T Nivetha, B Bindu, KN Ain - Microelectronic Engineering, 2024 - Elsevier
The resistive RAM (RRAM) based in-memory computation is a promising technology to
overcome the Von-Neumann bottleneck to provide fast and efficient computation. The RRAM …

Quantum tunneling noise-based entropy core for true random number generation

A Kadam, H Hajare, A Singh, L Somappa, MS Baghini… - 2024 - researchsquare.com
Securing edge devices is crucial in today's interconnected world, where the Internet of
Things (IoT) is rapidly expanding. A “True Random Number Generator (TRNG)” is pivotal in …

Design of Pre-Formed Resistive Random Access Memory-Based Physical Unclonable Functions for Hardware Security Applications

TJ Wilson - 2024 - search.proquest.com
The competitive landscape in emerging nonvolatile memories, encompassing Resistive
Random Access Memory (ReRAM), Ferroelectric Random Access Memory (FeRAM), and …

A random number generator with hardware switching devices

Y Shen, X Gao, Y Sun, Z Li, J **e… - 2023 IEEE 3rd …, 2023 - ieeexplore.ieee.org
Utilizing a hardware-based random number generator is a viable strategy for enhancing the
security of the fundamental procedures in handling sensitive data within a computer system …

Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

G Vinuesa, H García, S Dueñas, H Castán… - Materials Science in …, 2014 - uvadoc.uva.es
The dependence of the current in TiN/Ti/HfO2/W devices on the temperature is investigated
in the range from 78 K to 340 K. Resistive switching cycles at 78 K are conducted to explore …