Half-century of Efros–Shklovskii Coulomb gap: Romance with Coulomb interaction and disorder

BI Shklovskii - Low Temperature Physics, 2024 - pubs.aip.org
The Efros–Shklovskii (ES) Coulomb gap in the one-electron density of localized states and
the ES law of the variable range hop** conductivity were coined 50 years ago. The theory …

Electronic transport, metal-insulator transition, and Wigner crystallization in transition metal dichalcogenide monolayers

Y Huang, S Das Sarma - Physical Review B, 2024 - APS
Two recent electronic transport experiments from Columbia University and Harvard
University have reported record high mobility and low channel densities in flux-grown …

Tuning optical and thermoelectric properties of LaCoO3: partial substitution of La by isovalent Gd

UD Shanubhogue, A Pal, A Rao… - Journal of Alloys and …, 2023 - Elsevier
In this study, we report the structural, hardness, optical, and high temperature thermoelectric
properties of Gd-doped lanthanum cobaltite La 1− x Gd x CoO 3 (x= 0.0, 0.2, 0.4, 0.6). The …

Terahertz photoconductivity in bilayer graphene transistors: evidence for tunneling at gate-induced junctions

DA Mylnikov, EI Titova, MA Kashchenko, IV Safonov… - Nano Letters, 2022 - ACS Publications
Photoconductivity of novel materials is the key property of interest for design of
photodetectors, optical modulators, and switches. Despite the photoconductivity of most …

Planar Hall effect and magnetoresistance of epitaxial films

R Kumar, P Bajracharya, P Haghi Ashtiani, R Paxson… - Physical Review B, 2024 - APS
The measurements of anisotropic magnetoresistance (AMR), planar Hall effect (PHE) and
temperature-dependent conductivity in materials with strong spin-orbit coupling yield …

Preparation, properties and application of completely compensated Ge-on-GaAs films

VF Mitin, PM Lytvyn - Applied Physics A, 2024 - Springer
We present and generalize the preparation conditions and properties of strongly
compensated Ge films grown on semi-insulating GaAs (100) substrates by vacuum …

Oxygen ion diffusion in RE3TaO7: Why long-range migration of O2− is prohibited in the defective-fluorite structure?

G Ren, H Zhang, J Che, H Cai, Y Hu, Q Hu, N Ni… - Acta Materialia, 2024 - Elsevier
Oxides with low O 2− lattice diffusion rate are critical for the development of topcoat
materials for next generation thermal barrier coatings (TBCs) working at> 1600° C to prevent …

Conductivity of two-dimensional small gap semiconductors and topological insulators in strong Coulomb disorder

Y Huang, B Skinner, BI Shklovskii - Journal of Experimental and …, 2022 - Springer
We are honored to dedicate this article to Emmanuel Rashba on the occasion of his 95
birthday. In the ideal disorder-free situation, a two-dimensional bandgap insulator has an …

Bound state continuum resonance transition in a shallow quantum well

Y Huang, S Das Sarma - Physical Review B, 2024 - APS
We show a transition from a bound state to a continuum resonance in a shallow quantum
well (QW) by electrostatic gating to bend the conduction band edge. This bound state …

Electrical properties of completely compensated single-crystal Ge-on-GaAs films with two-dimension Coulomb disorder

VF Mitin - Solid State Communications, 2024 - Elsevier
We present electrical properties of heavily doped and completely compensated Ge films
grown on semiinsulating GaAs (100) substrates by vacuum evaporation. The thin (∼ 100 …