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Half-century of Efros–Shklovskii Coulomb gap: Romance with Coulomb interaction and disorder
BI Shklovskii - Low Temperature Physics, 2024 - pubs.aip.org
The Efros–Shklovskii (ES) Coulomb gap in the one-electron density of localized states and
the ES law of the variable range hop** conductivity were coined 50 years ago. The theory …
the ES law of the variable range hop** conductivity were coined 50 years ago. The theory …
Electronic transport, metal-insulator transition, and Wigner crystallization in transition metal dichalcogenide monolayers
Two recent electronic transport experiments from Columbia University and Harvard
University have reported record high mobility and low channel densities in flux-grown …
University have reported record high mobility and low channel densities in flux-grown …
Tuning optical and thermoelectric properties of LaCoO3: partial substitution of La by isovalent Gd
In this study, we report the structural, hardness, optical, and high temperature thermoelectric
properties of Gd-doped lanthanum cobaltite La 1− x Gd x CoO 3 (x= 0.0, 0.2, 0.4, 0.6). The …
properties of Gd-doped lanthanum cobaltite La 1− x Gd x CoO 3 (x= 0.0, 0.2, 0.4, 0.6). The …
Terahertz photoconductivity in bilayer graphene transistors: evidence for tunneling at gate-induced junctions
Photoconductivity of novel materials is the key property of interest for design of
photodetectors, optical modulators, and switches. Despite the photoconductivity of most …
photodetectors, optical modulators, and switches. Despite the photoconductivity of most …
Planar Hall effect and magnetoresistance of epitaxial films
The measurements of anisotropic magnetoresistance (AMR), planar Hall effect (PHE) and
temperature-dependent conductivity in materials with strong spin-orbit coupling yield …
temperature-dependent conductivity in materials with strong spin-orbit coupling yield …
Preparation, properties and application of completely compensated Ge-on-GaAs films
VF Mitin, PM Lytvyn - Applied Physics A, 2024 - Springer
We present and generalize the preparation conditions and properties of strongly
compensated Ge films grown on semi-insulating GaAs (100) substrates by vacuum …
compensated Ge films grown on semi-insulating GaAs (100) substrates by vacuum …
Oxygen ion diffusion in RE3TaO7: Why long-range migration of O2− is prohibited in the defective-fluorite structure?
Oxides with low O 2− lattice diffusion rate are critical for the development of topcoat
materials for next generation thermal barrier coatings (TBCs) working at> 1600° C to prevent …
materials for next generation thermal barrier coatings (TBCs) working at> 1600° C to prevent …
Conductivity of two-dimensional small gap semiconductors and topological insulators in strong Coulomb disorder
We are honored to dedicate this article to Emmanuel Rashba on the occasion of his 95
birthday. In the ideal disorder-free situation, a two-dimensional bandgap insulator has an …
birthday. In the ideal disorder-free situation, a two-dimensional bandgap insulator has an …
Bound state continuum resonance transition in a shallow quantum well
We show a transition from a bound state to a continuum resonance in a shallow quantum
well (QW) by electrostatic gating to bend the conduction band edge. This bound state …
well (QW) by electrostatic gating to bend the conduction band edge. This bound state …
Electrical properties of completely compensated single-crystal Ge-on-GaAs films with two-dimension Coulomb disorder
VF Mitin - Solid State Communications, 2024 - Elsevier
We present electrical properties of heavily doped and completely compensated Ge films
grown on semiinsulating GaAs (100) substrates by vacuum evaporation. The thin (∼ 100 …
grown on semiinsulating GaAs (100) substrates by vacuum evaporation. The thin (∼ 100 …