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Electronic and optical properties of semiconductor and graphene quantum dots
Our recent work on the electronic and optical properties of semiconductor and graphene
quantum dots is reviewed. For strained self-assembled InAs quantum dots on GaAs or InP …
quantum dots is reviewed. For strained self-assembled InAs quantum dots on GaAs or InP …
Observation of extremely slow hole spin relaxation in self-assembled quantum dots
We report the measurement of extremely slow hole spin relaxation dynamics in small
ensembles of self-assembled InGaAs quantum dots. Individual spin oriented holes are …
ensembles of self-assembled InGaAs quantum dots. Individual spin oriented holes are …
Spin noise of electrons and holes in self-assembled quantum dots
We measure the frequency spectra of random spin fluctuations, or “spin noise,” in
ensembles of (In, Ga) As/GaAs quantum dots (QDs) at low temperatures. We employ a spin …
ensembles of (In, Ga) As/GaAs quantum dots (QDs) at low temperatures. We employ a spin …
Anisotropy of electron and hole g-factors in (In, Ga) As quantum dots
The g-factor tensors of electron and hole in self-assembled (In, Ga) As/GaAs quantum dots
are studied by time-resolved ellipticity measurements in a three dimensional vector magnet …
are studied by time-resolved ellipticity measurements in a three dimensional vector magnet …
Spin-3 2 physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splittings
We present a detailed theoretical study of the electronic spectrum and Zeeman splitting in
hole quantum wires. The spin-3 2 character of the topmost bulk-valence-band states results …
hole quantum wires. The spin-3 2 character of the topmost bulk-valence-band states results …
Electrically controllable tensors in quantum dot molecules
T Andlauer, P Vogl - Physical Review B—Condensed Matter and Materials …, 2009 - APS
We present a quantitative theoretical analysis of electron, hole, and exciton g tensors of
vertically coupled InAs/GaAs quantum dot pairs in external electric and magnetic fields. For …
vertically coupled InAs/GaAs quantum dot pairs in external electric and magnetic fields. For …
Andreev spin-noise detector
We investigate the possibility to employ magnetic Josephson junctions as magnetic noise
detectors. To illustrate our idea, we consider a system consisting of a quantum dot coupled …
detectors. To illustrate our idea, we consider a system consisting of a quantum dot coupled …
Spin-orbit coupling and magnetic-field dependence of carrier states in a self-assembled quantum dot
In this work, we investigate the influence of spin-orbit coupling on the magnetic-field
dependence of carrier states in a self-assembled quantum dot. The electron and hole …
dependence of carrier states in a self-assembled quantum dot. The electron and hole …
Electron and hole factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths
We extend the range of quantum dot (QD) emission energies where electron and hole g
factors have been measured to the practically important telecom range. The spin dynamics …
factors have been measured to the practically important telecom range. The spin dynamics …
Homogeneous optical anisotropy in an ensemble of InGaAs quantum dots induced by strong enhancement of the heavy-hole band Landé parameter
We reveal the existence of a large in-plane heavy-hole g factor in symmetric self-assembled
(001)(In, Ga) As/GaAs quantum dots due to the war** of valence-band states. This …
(001)(In, Ga) As/GaAs quantum dots due to the war** of valence-band states. This …