At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

The Al x Ga 1− x As/GaAs heterostructure system is potentially of great importance for many
high-speed electronics and optoelectronic devices, because the lattice parameter difference …

A sum rule for electronic intersubband transitions has been derived following Kane's model,
beyond the quadratic dispersion relations. The sum rule takes into account the effects of …

Resonant optical coupling experiments have demonstrated coherent quantum interference
between the Stark-split “dressed states” of a synthesized 3-level electronic system in a …

Publisher Summary This chapter focuses on the basic aspects of intersubband transitions,
with the main emphasis on linear absorption. An expression for the intersubband absorption …

We present a simple, general method for calculating the binding energies of excitons in
quantum-confined structures. The binding energy is given by an integral (over the electron …

We investigate a number of issues related to the application of the envelope-function
method to calculate confined-state energies and subband structure in quantum-well …

The effect of interface bond configuration on the structural and optical properties of short-
period (approximately= 50 AA) GaSb/InAs superlattices has been examined. Structures …

The influence of the conduction-band nonparabolicity on the intersubband absorption line
broadening in GaAs/Al x Ga 1− x As quantum wells is discussed in the framework of an …

Abstract Effect of charge carrier confinement and ultra-low disorder acquainted in
AlGaAs/GaAs multi-quantum well system is investigated via Magneto-photoluminescence …