Prospects of graphene-based heat sink and its computational thermal analysis in avalanche transit time devices
GC Ghivela - Journal of Computational Electronics, 2023 - Springer
The junction of impact ionization and avalanche transit time (IMPATT) diodes generally
operates at a higher temperature than ambient temperature. Therefore, the junction …
operates at a higher temperature than ambient temperature. Therefore, the junction …
A steady state analysis of boron nitride DDR IMPATT diode
The objective of this paper is to conduct steady state analysis of drift region IMPATT diode
composed of Boron Nitride. This is performed in order to achieve dc parameters like electric …
composed of Boron Nitride. This is performed in order to achieve dc parameters like electric …
Computation of quantum‐corrected noise in graphene‐SiC‐based impact avalanche transit time diode
Here, we have performed the noise analysis in graphene‐SiC‐based double drift region
impact avalanche transit time diode (IMPATT). For computation, the noise model taken is …
impact avalanche transit time diode (IMPATT). For computation, the noise model taken is …
Prospects of Black Phosphorous in Transit Time Devices
Due to adjustable bandgap of black phosphorous, for the first time an attempt has been
made here for the design and development IMPATT diode. Using MATLAB software, the DC …
made here for the design and development IMPATT diode. Using MATLAB software, the DC …
Prospects and potentiality of diamond-based DDR IMPATTs in THz regime
This paper is scrutinised elaborately to traverse the probability and potency of type-IIb
diamond as a semiconducting substance of double-drift region (DDR) impact ionisation …
diamond as a semiconducting substance of double-drift region (DDR) impact ionisation …