Since Moore's law in the traditional semiconductor industry is facing shocks, More Moore
and More than Moore are proposed as two paths to maintain the development of the …

Germanium is a promising material for future very large scale integration transistors, due to
its superior hole mobility. However, germanium-based devices typically suffer from high …

We demonstrate Ge0. 95Sn0. 05 p-channel gate-all-around field-effect transistors (p-
GAAFETs) with sub-3 nm nanowire width (W NW) on a GeSn-on-insulator (GeSnOI) …

Two parts of work are included in this paper. In the first part, the novel Ge gate-all-around
field effect transistors (GAA FETs) are introduced and discussed. Fabrication of Ge GAA …

Strain engineering is a widely used technique for enhancing the mobility of charge carriers
in semiconductors, but its effect is not fully understood. In this work, we perform first …

Optical freeform surfaces are of great advantage in excellent optical performance and
integrated alignment features. It has wide applications in illumination, imaging and non …

In this paper, a near-infrared “Ge-on-Si” camera with backside illumination, is presented.
The camera consists of a photonic chip, a readout chip, and a commercial microcontroller …

Featured Application This work has implications for the fabrication of nickel silicide–silicon
Schottky junction-based devices such as reconfigurable field-effect transistors. Abstract We …

We show electrical properties of a Ge-based top-gate metal-oxide-semiconductor field-
effect transistor (MOSFET) structure with epitaxial ferromagnetic Heusler alloy/Ge Schottky …

In this paper, Ge nanowire (NW) CMOS devices and circuits are analyzed in detail. Various
experiment splits are studied, including device geometry parameters such as the channel …