Synthesis of novel nanocomposite of g-C3N4 coated ZnO–MoS2 for energy storage and photocatalytic applications
D Sahu, NR Panda - Chemosphere, 2024 - Elsevier
Fabrication of heterostructures for energy storage and environmental remedial applications
is an interesting subject of research that has been undertaken in this present investigation …
is an interesting subject of research that has been undertaken in this present investigation …
[HTML][HTML] Unraveling the synergistic effects in ZnO-MoS2 nanocomposite leading to enhanced photocatalytic, antibacterial and dielectric characteristics
NR Panda, SK Sahu, A Palai, T Yadav, D Behera… - Chemical Physics …, 2024 - Elsevier
The primary focus of the work is to study the structural, optical, dielectric and antibacterial
properties of ZnO-MoS 2 nanocomposite synthesized wet-chemically. X-ray diffraction (XRD) …
properties of ZnO-MoS 2 nanocomposite synthesized wet-chemically. X-ray diffraction (XRD) …
Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure
The electrical and dielectric properties of Al/SiO2/p-Si (MOS) structures were studied in the
frequency range 10kHz–10MHz and in the temperature range 295–400K. The interfacial …
frequency range 10kHz–10MHz and in the temperature range 295–400K. The interfacial …
Electrical characterization of a single-crystalline Si quantum well formed by thermal oxidation of ultrathin silicon-on-insulator film (Al/SiO2:c-Si QW/n-Si) for …
The incorporation of nanostructures such as silicon nanocrystals into the oxide of an MOS
structure has attracted significant interest in improving the performance of MOS-based …
structure has attracted significant interest in improving the performance of MOS-based …
Density of interface states, excess capacitance and series resistance in the metal–insulator–semiconductor (MIS) solar cells
Dark and illuminatied current–voltage (I–V) characteristics of Al/SiOx/p-Si metal–insulator–
semiconductor (MIS) solar cells were measured at room temperature. In addition to …
semiconductor (MIS) solar cells were measured at room temperature. In addition to …
[КНИГА][B] Radiation synthesis of materials and compounds
BI Kharisov, OV Kharissova, UO Méndez - 2016 - books.google.com
This book presents the state of the art of the synthesis of materials, composites, and
chemical compounds, and describes methods based on the use of ionizing radiation. It is …
chemical compounds, and describes methods based on the use of ionizing radiation. It is …
On the profile of frequency dependent series resistance and dielectric constant in MIS structure
In this study, the frequency dependent of the forward and reverse bias capacitance–voltage
(C–V) and conductance–voltage (G/ω–V) measurements of Al/SiO2/p-Si (MIS) structures are …
(C–V) and conductance–voltage (G/ω–V) measurements of Al/SiO2/p-Si (MIS) structures are …
Characterization of electrical parameters in PbO/SnO2 double layer semiconductor (DLS) diodes
The study examines how a double-layer semiconductor (DLS) structure affects the diodes'
electrical parameters. As a double-layer structure, PbO (Lead oxide) and SnO 2 (Tin (IV) …
electrical parameters. As a double-layer structure, PbO (Lead oxide) and SnO 2 (Tin (IV) …
Electrical properties of Sn/p-Si (MS) Schottky barrier diodes to be exposed to 60Co γ-ray source
In this research, we have investigated the electrical properties of metal-semiconductor (Sn/p-
Si) Schottky barrier diodes (SBDs) under 60Co gamma (γ)-rays. These devices is stressed …
Si) Schottky barrier diodes (SBDs) under 60Co gamma (γ)-rays. These devices is stressed …
Effects of 60Co γ-ray irradiation on the electrical characteristics of Au/n-GaAs (MS) structures
In order to interpret the effect of 60Co γ-ray radiation dose on the electrical characteristics of
metal–semiconductor (Au/n-GaAs) Schottky barrier diodes (SBDs), these devices were …
metal–semiconductor (Au/n-GaAs) Schottky barrier diodes (SBDs), these devices were …