Observation of optical anisotropy and a linear dichroism transition in layered silicon phosphide

X **e, J Ding, B Wu, H Zheng, S Li, CT Wang, J He… - Nanoscale, 2023 - pubs.rsc.org
The investigation of in-plane two-dimensional (2D) anisotropic materials has garnered
significant attention due to their exceptional electronic, optical, and mechanical …

Anisotropic Mechanical Properties of Orthorhombic SiP2 Monolayer: A First-Principles Study

Y Hou, K Ren, Y Wei, D Yang, Z Cui, K Wang - Molecules, 2023 - mdpi.com
In recent years, the two-dimensional (2D) orthorhombic SiP2 flake has been peeled off
successfully by micromechanical exfoliation and it exhibits an excellent performance in …

Unravelling the anisotropic light-matter interaction in strain-engineered trihalide MoCl3

Y Sun, Z Liu, Z Li, F Qin, J Huang, C Qiu, H Yuan - Nano Research, 2024 - Springer
Layered trihalides exhibit distinctive band structures and physical properties due to the
sixfold coordinated 3d or 4d transition metal site and partially occupied d orbitals, holding …

Unveiling strain-enhanced moiré exciton localization in twisted van der Waals homostructures

HR He, H Zheng, B Wu, S Li, J Ding, Z Liu, JT Wang… - Nano Research, 2024 - Springer
Moiré superlattices, arising from the controlled twisting of van der Waals homostructures at
specific angles, have emerged as a promising platform for quantum emission applications …

Unraveling High Thermal Conductivity with In-Plane Anisotropy Observed in Suspended SiP2

X Dai, C Qiu, X Bi, C Sui, P Chen, F Qin… - ACS Applied Materials …, 2024 - ACS Publications
The anisotropic thermal transport properties of low-symmetry two-dimensional materials play
an important role in understanding heat dissipation and optimizing thermal management in …

Extreme Anisotropic Dispersion and One-Dimensional Confined Electrons in 2-D SiP₂ FETs With High Transmission Coefficients

J Yang, W Zhou, C Chen, J Zhang, H Qu… - … on Electron Devices, 2023 - ieeexplore.ieee.org
2-D semiconductors are promising Si alternatives for channels in next-generation electronic
devices. Considering the 2-D SiP2 with unique dispersion at the band edge and intrinsic P …