The effect of charged particle irradiation on the transport properties of bismuth chalcogenide topological insulators: a brief review
Topological insulators (TIs) offer a novel platform for achieving exciting applications, such as
low-power electronics, spintronics, and quantum computation. Hence, the spin-momentum …
low-power electronics, spintronics, and quantum computation. Hence, the spin-momentum …
Evidence for electron-electron interaction in topological insulator thin films
We consider in our work single crystal thin films of Bi 2 Se 3, grown by molecular beam
epitaxy, both with and without Pb do**. Angle-resolved photoemission data demonstrate …
epitaxy, both with and without Pb do**. Angle-resolved photoemission data demonstrate …
Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons
A topological insulator is the state of quantum matter possessing gapless spin-locking
surface states across the bulk band gap, which has created new opportunities from novel …
surface states across the bulk band gap, which has created new opportunities from novel …
A roadmap for controlled production of topological insulator nanostructures and thin films
The group V–VI chalcogenide semiconductors (Bi2Se3, Bi2Te3, and Sb2Te3) have long
been known as thermoelectric materials. Recently, they have been once more generating …
been known as thermoelectric materials. Recently, they have been once more generating …
Formation of Inert Bi2Se3(0001) Cleaved Surface
A high quality inclusion-free Bi2Se3 crystal has been grown by the Bridgman method with
the use of a rotating heat field. A large-area atomically flat Bi2Se3 (0001) surface of …
the use of a rotating heat field. A large-area atomically flat Bi2Se3 (0001) surface of …
[HTML][HTML] First-principles study of native point defects in Bi2Se3
Using first-principles method within the framework of the density functional theory, we study
the influence of native point defect on the structural and electronic properties of Bi 2 Se 3. Se …
the influence of native point defect on the structural and electronic properties of Bi 2 Se 3. Se …
Suppressing Twin Formation in Bi2Se3 Thin Films
The microstructure of Bi2Se3 topological‐insulator thin films grown by molecular beam
epitaxy on InP (111) A and InP (111) B substrates that have different surface roughnesses …
epitaxy on InP (111) A and InP (111) B substrates that have different surface roughnesses …
Simple tuning of carrier type in topological insulator Bi2Se3 by Mn do**
Bi 2 Te 3 is a well-known thermoelectric material for room-temperature operations because it
has a high Seebeck coefficient, and the charge carrier type is easily tunable. However, the …
has a high Seebeck coefficient, and the charge carrier type is easily tunable. However, the …
Observations of a metal-insulator transition and strong surface states in Bi2-x SbxSe3 thin films.
High-quality thin films of the topological insulator Bi2-xSbxSe3 are grown by molecular
beam epitaxy. A metal-insulator transition along with strong surface states-revealed by …
beam epitaxy. A metal-insulator transition along with strong surface states-revealed by …
Investigation on the electrical transport properties of highly (00l)-textured Sb2Te3 films deposited by molecular beam epitaxy
X Zhang, Z Zeng, C Shen, Z Zhang, Z Wang… - Journal of Applied …, 2014 - pubs.aip.org
Highly (00l)-textured antimony telluride films were fabricated using molecular beam epitaxy
(MBE) on Si (111) substrate at 280 C. X-ray diffraction analysis implying the samples have …
(MBE) on Si (111) substrate at 280 C. X-ray diffraction analysis implying the samples have …