GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …

The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field
effect transistor (MOSFET) is a promising architecture for the development of efficient GaN …

Interface characterization was carried out on Al 2 O 3/GaN structures using epitaxial n-GaN
layers grown on free-standing GaN substrates with relatively low dislocation density (< 3× 10 …

III-nitride heterostructure-based metal–insulator–semiconductor high-electron-mobility
transistors (MIS-HEMTs), compared with Schottky and p-GaN gate HEMTs, have …

We present a detailed investigation of the trap** and detrap** mechanisms that take
place in the gate region of β-Ga 2 O 3 vertical finFETs and describe the related processes …

In this paper, we extensively characterize and model the threshold voltage instability in
lateral β-Ga 2 O 3 MOSFETs with Al 2 O 3 gate dielectric. Specifically,(i) the results indicate …

The study of interface states and bulk traps and their connection to device instability is highly
demanded to achieve reliable β-Ga2O3 metal-oxide-semiconductor (MOS) devices …

In this letter, we report on a unique positive bias stress (PBS) instability observed in the
heterogeneous Ga2O3-on-SiC (GaOSiC) metal-oxide-semiconductor field-effect transistor …

Time-dependent second harmonic generation (TD-SHG) is an emergent sensitive and non-
contact method to qualitatively/quantitively characterize the semiconductor materials, which …

We present a first study of threshold voltage instabilities of semi-vertical GaN-on-Si trench-
MOSFETs, based on double pulsed, threshold voltage transient, and UV-assisted C–V …