Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

E Tournié, L Monge Bartolome, M Rio Calvo… - Light: Science & …, 2022 - nature.com
There is currently much activity toward the integration of mid-infrared semiconductor lasers
on Si substrates for develo** a variety of smart, compact, sensors based on Si-photonics …

Recent advances in light sources on silicon

Y Han, H Park, J Bowers, KM Lau - Advances in Optics and Photonics, 2022 - opg.optica.org
Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …

Hybrid and heterogeneous photonic integration

P Kaur, A Boes, G Ren, TG Nguyen, G Roelkens… - APL Photonics, 2021 - pubs.aip.org
Increasing demand for every faster information throughput is driving the emergence of
integrated photonic technology. The traditional silicon platform used for integrated …

Heteroepitaxial growth of III-V semiconductors on silicon

JS Park, M Tang, S Chen, H Liu - Crystals, 2020 - mdpi.com
Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …

Review of highly mismatched III-V heteroepitaxy growth on (001) silicon

Y Du, B Xu, G Wang, Y Miao, B Li, Z Kong, Y Dong… - Nanomaterials, 2022 - mdpi.com
Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …

[BUKU][B] Nucleation theory and growth of nanostructures

VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

Method for fabricating a semiconductor structure including a metal oxide interface with silicon

J Ramdani, R Droopad, Z Yu - US Patent 6,709,989, 2004 - Google Patents
3,617,951 A 11/1971 Anderson 3,670,213 A 6/1972 Nakawaga et al. 3,766,370 A 10/1973
Walther 3,802,967 A 4/1974 Ladany et al. 3,914,137 A 10/1975 Huffman et al. 3,935,031 A …

High-mobility Si and Ge structures

F Schäffler - Semiconductor Science and Technology, 1997 - iopscience.iop.org
Silicon-based heterostructures have come a long way from the discovery of strain as a new
and essential parameter for band structure engineering to the present state of electron and …

How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches

B Kunert, Y Mols, M Baryshniskova… - Semiconductor …, 2018 - iopscience.iop.org
The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …

GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration

K Volz, A Beyer, W Witte, J Ohlmann, I Németh… - Journal of Crystal …, 2011 - Elsevier
This paper summarizes our present knowledge of the defect-free nucleation of III/V
semiconductors on exactly oriented Si (001) surfaces. A defect-free III/V nucleation layer on …