The mechanical properties of nanowires
Applications of nanowires into future generation nanodevices require a complete
understanding of the mechanical properties of the nanowires. A great research effort has …
understanding of the mechanical properties of the nanowires. A great research effort has …
Advanced compressible and elastic 3D monoliths beyond hydrogels
Abstract 3D monoliths have undergone great progress in the past decades in scientific and
engineering fields. Especially, compressible and elastic 3D monoliths (CEMs) hold great …
engineering fields. Especially, compressible and elastic 3D monoliths (CEMs) hold great …
Modeling hardness of polycrystalline materials and bulk metallic glasses
Though extensively studied, hardness, defined as the resistance of a material to
deformation, still remains a challenging issue for a formal theoretical description due to its …
deformation, still remains a challenging issue for a formal theoretical description due to its …
Nanobeam mechanics: elasticity, strength, and toughness of nanorods and nanotubes
EW Wong, PE Sheehan, CM Lieber - science, 1997 - science.org
The Young's modulus, strength, and toughness of nanostructures are important to proposed
applications ranging from nanocomposites to probe microscopy, yet there is little direct …
applications ranging from nanocomposites to probe microscopy, yet there is little direct …
Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide
We present an analytical bond-order potential for silicon, carbon, and silicon carbide that
has been optimized by a systematic fitting scheme. The functional form is adopted from a …
has been optimized by a systematic fitting scheme. The functional form is adopted from a …
Predicted band-gap pressure coefficients of all diamond and zinc-blende semiconductors: Chemical trends
We have studied systematically the chemical trends of the band-gap pressure coefficients of
all group IV, III-V, and II-VI semiconductors using first-principles band-structure method. We …
all group IV, III-V, and II-VI semiconductors using first-principles band-structure method. We …
Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN
The results of first-principles full-potential linear muffin-tin orbital calculations of the elastic
constants and related structural and electronic properties of BN, AlN, GaN, and InN in both …
constants and related structural and electronic properties of BN, AlN, GaN, and InN in both …
Tests of a ladder of density functionals for bulk solids and surfaces
The local spin-density approximation (LSDA) and the generalized gradient approximation
(GGA) of Perdew, Burke, and Ernzerhof (PBE) are fully non-empirical realizations of the first …
(GGA) of Perdew, Burke, and Ernzerhof (PBE) are fully non-empirical realizations of the first …
Interaction potential for silicon carbide: A molecular dynamics study of elastic constants and vibrational density of states for crystalline and amorphous silicon carbide
An effective interatomic interaction potential for SiC is proposed. The potential consists of
two-body and three-body covalent interactions. The two-body potential includes steric …
two-body and three-body covalent interactions. The two-body potential includes steric …
Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
With the increasing requirements for microelectromechanical systems (MEMS) regarding
stability, miniaturization and integration, novel materials such as wide band gap …
stability, miniaturization and integration, novel materials such as wide band gap …