Statistical characterization of CMOS transistor variability phenomena in modern nanometer
technologies is key for accurate end-of-life prediction. This paper presents a novel CMOS …

This paper presents an innovative and automated measurement setup for the
characterization of variability effects in CMOS transistors using array-based integrated …

In the emerging process-based transistors, random telegraph noise (RTN) has become a
critical reliability problem. However, the conventional method to analyze RTN properties …

A simple dual-point technique to measure the entire transfer characteristics (ID-VG) down to
sub-threshold region in the nano-scaled MOSFET under random telegraph noise (RTN) …

Due to the technological limitations, nanotechnology-enabled novel RF switches have
emerged leading to research efforts in the telecommunications sector focusing on the …

Recent MOSFET devices exhibit a strong variability in their Bias Temperature Instability (BTI)
induced degradation (eg, Vth-shift). For identical stress patterns, each device exhibits …

RTN is one of the most relevant time-dependent variability sources and, as such, must be
taken into account during the design of memories, digital and analog VLSI-integrated circuits …

Addressable transistor arrays using 65 nm bulk technology were fabricated and tested at
cryogenic temperatures. It was confirmed that variability at 1.5 K slightly degrades compared …

The need for hardware random number generators (HRNGs) that can be integrated in a
silicon (Si) complementary-metal–oxide–semiconductor (CMOS) platform has become …

A value representative of a dispersion of a propagation delay of assemblies of electronic
components is determined. A component test structure includes stages of components and a …