A review of SiC power module packaging technologies: Challenges, advances, and emerging issues
Power module packaging technologies have been experiencing extensive changes as the
novel silicon carbide (SiC) power devices with superior performance become commercially …
novel silicon carbide (SiC) power devices with superior performance become commercially …
Parasitic capacitive couplings in medium voltage power electronic systems: An overview
Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …
devices are drawing attention from both researchers and industries due to the demanding …
Impact of power module parasitic capacitances on medium-voltage SiC MOSFETs switching transients
Increased switching speeds of wide bandgap (WBG) semiconductors result in a significant
magnitude of the displacement currents through power module parasitic capacitances that …
magnitude of the displacement currents through power module parasitic capacitances that …
Modeling and validation of common-mode emissions in wide bandgap-based converter structures
Modern power converters designed with wide band-gap (WBG) semiconductors are known
to generate substantial conducted electromagnetic interference (EMI) as a side effect of high …
to generate substantial conducted electromagnetic interference (EMI) as a side effect of high …
Physics-based modeling of parasitic capacitance in medium-voltage filter inductors
This article proposes a general physics-based model for identifying the parasitic
capacitance in medium-voltage (MV) filter inductors, which can provide analytical …
capacitance in medium-voltage (MV) filter inductors, which can provide analytical …
Analysis and cancellation of leakage current through power module baseplate capacitance
The fast edge rates achievable by wide-bandgap semiconductors can produce significant
common-mode (CM) leakage currents through the baseplates of encompassing power …
common-mode (CM) leakage currents through the baseplates of encompassing power …
Reduction of parasitic capacitance in 10 kV SiC MOSFET power modules using 3D FEM
The benefits of emerging wide-band gap semiconductors can only be utilized if the
semiconductor is properly packaged. Capacitive coupling in the package causes …
semiconductor is properly packaged. Capacitive coupling in the package causes …
Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter
This paper investigates gate driver design challenges encountered due to the fast switching
transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper …
transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper …
Demonstration of a 10 kV SiC MOSFET based medium voltage power stack
This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage
power conversion with a simple two-level voltage source converter topology. The design of …
power conversion with a simple two-level voltage source converter topology. The design of …
Discovery of Loss Imbalance in SiC Half-Bridge Power Modules–Analysis and Validations
It is commonly assumed that power semiconductor switching losses are the same for high-
side and low-side devices in a half-bridge power module. However, this article reveals that …
side and low-side devices in a half-bridge power module. However, this article reveals that …