Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

Perspectives on UVC LED: Its progress and application

TC Hsu, YT Teng, YW Yeh, X Fan, KH Chu, SH Lin… - Photonics, 2021 - mdpi.com
High-quality epitaxial layers are directly related to internal quantum efficiency. The methods
used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light …

AlGaN ultraviolet micro-LEDs

P Tian, X Shan, S Zhu, E **e… - IEEE Journal of …, 2022 - ieeexplore.ieee.org
AlGaN-based UV LEDs have proven to have broad applications in many fields including
sterilization, disinfection, purification, and phototherapy, but the performance still needs to …

AlGaN nanowires for ultraviolet light-emitting: recent progress, challenges, and prospects

S Zhao, J Lu, X Hai, X Yin - Micromachines, 2020 - mdpi.com
In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN)
nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such …

Ordered GaN nanorod arrays for self-powered photoelectrochemical ultraviolet photodetectors

K Chen, D Zhang, P Shao, T Zhi, J Zhao… - ACS Applied Nano …, 2022 - ACS Publications
Self-powered ultraviolet (UV) photodetectors have great application prospects in the fields of
UV astronomy, environmental monitoring, and space communication. In particular, the …

Highly responsive switchable broadband DUV‐NIR photodetector and tunable emitter enabled by uniform and vertically grown III–V nanowire on silicon substrate for …

H Yu, R Wang, MH Memon, Y Luo, S **ao, L Fu, H Sun - Small, 2024 - Wiley Online Library
Low‐dimensional semiconductor nanostructures, particularly in the form of nanowire
configurations with large surface‐to‐volume‐ratio, offer intriguing optoelectronic properties …

Analysis of the efficiency improvement of 273 nm AlGaN UV-C micro-LEDs

Z Qian, S Zhu, X Shan, P Yin, Z Yuan… - Journal of Physics D …, 2022 - iopscience.iop.org
UV-C LEDs have great application prospects in the fields of sterilization, disinfection, and
non-line-of-sight solar-blind communication. However, their efficiency is currently not high …

UV Emission from GaN Wires with m-Plane Core–Shell GaN/AlGaN Multiple Quantum Wells

V Grenier, S Finot, G Jacopin, C Bougerol… - … Applied Materials & …, 2020 - ACS Publications
The present work reports high-quality nonpolar GaN/Al0. 6Ga0. 4N multiple quantum wells
(MQWs) grown in core–shell geometry by metal–organic vapor-phase epitaxy on the m …

In-depth insights into polarization-dependent light extraction mechanisms of AlGaN-based deep ultraviolet light-emitting diodes

T Zheng, C Zhou, H Zhu, Q Lin, L Yang, D Cai… - Optics …, 2023 - opg.optica.org
The AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) dominated by
transverse-magnetic (TM) polarized emission suffer from extremely poor light extraction …

Tripling the light extraction efficiency of a deep ultraviolet LED using a nanostructured p-contact

E López-Fraguas, F Binkowski, S Burger… - Scientific Reports, 2022 - nature.com
Despite a wide array of applications, deep ultra-violet light emitting diodes offer relatively
poor efficiencies compared to their optical counterparts. A contributing factor is the lower …